Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions

Tuning the electron and phonon transport properties of thermoelectric materials by nanostructuring has enabled improving their thermopower figure of merit. Three-dimensional topological insulators, including many bismuth chalcogenides, attract increasing attention for this purpose, as their topologically protected surface states are promising to further enhance the thermoelectric performance. While individual bismuth chalcogenide nanostructures have been studied with respect to their photothermoelectric properties, nanostructured p–n junctions of these compounds have not yet been explored. Here, we experimentally investigate the room temperature thermoelectric conversion capability of lateral heterostructures consisting of two different three-dimensional topological insulators, namely, the n-type doped Bi₂Te₂Se and the p-type doped Sb₂Te₃. Scanning photocurrent microscopy of the nanoplatelets reveals efficient thermoelectric conversion at the p–n heterojunction, exploiting hot carriers of opposite sign in the two materials. From the photocurrent data, a Seebeck coefficient difference of Δ<i>S</i> = 200 μV/K was extracted, in accordance with the best values reported for the corresponding bulk materials. Furthermore, it is in very good agreement with the value of Δ<i>S</i> = 185 μV/K obtained by DFT calculation taking into account the specific doping levels of the two nanostructured components

Raman Characterization of the Charge Density Wave Phase of 1T-TiSe₂: From Bulk to Atomically Thin Layers

Raman scattering is a powerful tool for investigating the vibrational properties of two-dimensional materials. Unlike the 2H phase of many transition metal dichalcogenides, the 1T phase of TiSe₂ features a Raman-active shearing and breathing mode, both of which shift toward lower energy with increasing number of layers. By systematically studying the Raman signal of 1T-TiSe₂ in dependence of the sheet thickness, we demonstrate that the charge density wave transition of this compound can be reliably determined from the temperature dependence of the peak position of the E_g mode near 136 cm^–1. The phase transition temperature is found to first increase with decreasing thickness of the sheets, followed by a decrease due to the effect of surface oxidation. The Raman spectroscopy-based method is expected to be applicable also to other 1T-phase transition metal dichalcogenides featuring a charge density wave transition and represents a valuable complement to electrical transport-based approaches

Spectroscopic Determination of the Electrochemical Potentials of n-Type Doped Carbon Nanotubes

Understanding the doping mechanism that involves substantial charge transfer between carbon nanotubes and chemical adsorbent is of critical importance for both basic scientific knowledge and nanodevice applications. Nevertheless, it is difficult to estimate the modification of electronic structures of the doped carbon nanotubes. Here we report measurements of electrochemical potentials of n-doped single-walled carbon nanotubes (SWCNTs) by using photoluminescence (PL) measurement. The change of the measured PL intensity before and after n-type doping was used to extract the electrochemical potential using the Nernst equation. The measured electrochemical potentials of SWCNTs approached the theoretical reduction potential of SWCNTs as the mole concentration of the dopant increased. The doping effect was also confirmed by the change of absorption spectroscopy. The quenching of the PL and absorption intensity was strongly correlated to the standard reduction potential of the dopant and its concentration. This investigation could be a cornerstone for SWCNTs-based electronic device applications such as solar cells, light-emitting diodes, and nanogenerators

Stranski–Krastanov and Volmer–Weber CVD Growth Regimes To Control the Stacking Order in Bilayer Graphene

Aside from unusual properties of monolayer graphene, bilayer has been shown to have even more interesting physics, in particular allowing bandgap opening with dual gating for proper interlayer symmetry. Such properties, promising for device applications, ignited significant interest in understanding and controlling the growth of bilayer graphene. Here we systematically investigate a broad set of flow rates and relative gas ratio of CH₄ to H₂ in atmospheric pressure chemical vapor deposition of multilayered graphene. Two very different growth windows are identified. For relatively high CH₄ to H₂ ratios, graphene growth is relatively rapid with an initial first full layer forming in seconds upon which new graphene flakes nucleate then grow on top of the first layer. The stacking of these flakes versus the initial graphene layer is mostly turbostratic. This growth mode can be likened to Stranski–Krastanov growth. With relatively low CH₄ to H₂ ratios, growth rates are reduced due to a lower carbon supply rate. In addition bi-, tri-, and few-layer flakes form directly over the Cu substrate as individual islands. Etching studies show that in this growth mode subsequent layers form beneath the first layer presumably through carbon radical intercalation. This growth mode is similar to that found with Volmer–Weber growth and was shown to produce highly oriented AB-stacked materials. These systematic studies provide new insight into bilayer graphene formation and define the synthetic range where gapped bilayer graphene can be reliably produced