2,436 research outputs found
Detection of cochlear hearing loss applying wavelet packets and support vector machines
The aim of this paper is to evaluate the application of the wavelet packet transform (WP) and support vector machines (SVM) to transient evoked otoacoustic emissions (TEOAE) in order to achieve a detection of frequency-specific hearing loss. We introduce a system to determine detection rates between groups of persons with normal hearing, high frequency hearing loss, and pantonal hearing loss. The validity and use of our approach is verified on a different patient group
Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films
Effects of spin-orbit coupling and s-d exchange interaction are probed by
magnetoresistance measurements carried out down to 50 mK on ZnO and
Zn_{1-x}Mn_{x}O with x = 3 and 7%. The films were obtained by laser ablation
and doped with Al to electron concentration ~10^{20} cm^{-3}. A quantitative
description of the data for ZnO:Al in terms of weak-localization theory makes
it possible to determine the coupling constant \lambda_{so} = (4.4 +-
0.4)*10^{-11} eVcm of the kp hamiltonian for the wurzite structure, H_{so} =
\lambda_{so}*c(s x k). A complex and large magnetoresistance of
Zn_{1-x}Mn_{x}O:Al is interpreted in terms of the influence of the s-d
spin-splitting and magnetic polaron formation on the disorder-modified
electron-electron interactions. It is suggested that the proposed model
explains the origin of magnetoresistance observed recently in many magnetic
oxide systems.Comment: 4 pages, 4 figure
Tailoring ferromagnetic chalcopyrites
If magnetic semiconductors are ever to find wide application in real
spintronic devices, their magnetic and electronic properties will require
tailoring in much the same way that band gaps are engineered in conventional
semiconductors. Unfortunately, no systematic understanding yet exists of how,
or even whether, properties such as Curie temperatures and band gaps are
related in magnetic semiconductors. Here we explore theoretically these and
other relationships within 64 members of a single materials class, the Mn-doped
II-IV-V2 chalcopyrites, three of which are already known experimentally to be
ferromagnetic semiconductors. Our first-principles results reveal a variation
of magnetic properties across different materials that cannot be explained by
either of the two dominant models of ferromagnetism in semiconductors. Based on
our results for structural, electronic, and magnetic properties, we identify a
small number of new stable chalcopyrites with excellent prospects for
ferromagnetism.Comment: 6 pages with 4 figures, plus 3 supplementary figures; to appear in
Nature Material
Noncollinear Ferromagnetism in (III,Mn)V Semiconductors
We investigate the stability of the collinear ferromagnetic state in kinetic
exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions
>. Our results suggest that {\em noncollinear ferromagnetism} is commom to
these semiconductor systems. The instability of the collinear state is due to
long-ranged fluctuations invloving a large fraction of the localized magnetic
moments. We address conditions that favor the occurrence of noncollinear
groundstates and discuss unusual behavior that we predict for the temperature
and field dependence of its saturation magnetization.Comment: 5 pages, one figure included, presentation of technical aspects
simplified, version to appear in Phys. Rev. Let
Magnetic properties of undoped Cu2O fine powders with magnetic impurities and/or cation vacancies
Fine powders of micron- and submicron-sized particles of undoped Cu2O
semiconductor, with three different sizes and morphologies have been
synthesized by different chemical processes. These samples include nanospheres
200 nm in diameter, octahedra of size 1 micron, and polyhedra of size 800 nm.
They exhibit a wide spectrum of magnetic properties. At low temperature, T = 5
K, the octahedron sample is diamagnetic. The nanosphere is paramagnetic. The
other two polyhedron samples synthesized in different runs by the same process
are found to show different magnetic properties. One of them exhibits weak
ferromagnetism with T_C = 455 K and saturation magnetization, M_S = 0.19 emu/g
at T = 5 K, while the other is paramagnetic. The total magnetic moment
estimated from the detected impurity concentration of Fe, Co, and Ni, is too
small to account for the observed magnetism by one to two orders of magnitude.
Calculations by the density functional theory (DFT) reveal that cation
vacancies in the Cu2O lattice are one of the possible causes of induced
magnetic moments. The results further predict that the defect-induced magnetic
moments favour a ferromagnetically coupled ground state if the local
concentration of cation vacancies, n_C, exceeds 12.5%. This offers a possible
scenario to explain the observed magnetic properties. The limitations of the
investigations in the present work, in particular in the theoretical
calculations, are discussed and possible areas for further study are suggested.Comment: 20 pages, 5 figures 2 tables, submitted to J Phys Condense Matte
Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors
The magnetic behavior of insulating doped diluted magnetic semiconductors
(DMS) is characterized by the interaction of large collective spins known as
bound magnetic polarons. Experimental measurements of the susceptibility of
these materials have suggested that the polaron-polaron interaction is
ferromagnetic, in contrast to the antiferromagnetic carrier-carrier
interactions that are characteristic of nonmagnetic semiconductors. To explain
this behavior, a model has been developed in which polarons interact via both
the standard direct carrier-carrier exchange interaction (due to virtual
carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due
to the interactions of polarons with magnetic ions in an interstitial region).
Using a variational procedure, the optimal values of the model parameters were
determined as a function of temperature. At temperatures of interest, the
parameters describing polaron-polaron interactions were found to be nearly
temperature-independent. For reasonable values of these constant parameters, we
find that indirect ferromagnetic interactions can dominate the direct
antiferromagnetic interactions and cause the polarons to align. This result
supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure
Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties
We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and
(Ga,Fe)N layers on c-sapphire substrates and their thorough characterization
via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy
(TEM), spatially-resolved energy dispersive X-ray spectroscopy (EDS),
secondary-ion mass spectroscopy (SIMS), photoluminescence (PL), Hall-effect,
electron-paramagnetic resonance (EPR), and magnetometry employing a
superconducting quantum interference device (SQUID). A combination of TEM and
EDS reveals the presence of coherent nanocrystals presumably FexN with the
composition and lattice parameter imposed by the host. From both TEM and SIMS
studies, it is stated that the density of nanocrystals and, thus the Fe
concentration increases towards the surface. In layers with iron content x<0.4%
the presence of ferromagnetic signatures, such as magnetization hysteresis and
spontaneous magnetization, have been detected. We link the presence of
ferromagnetic signatures to the formation of Fe-rich nanocrystals, as evidenced
by TEM and EDS studies. This interpretation is supported by magnetization
measurements after cooling in- and without an external magnetic field, pointing
to superparamagnetic properties of the system. It is argued that the high
temperature ferromagnetic response due to spinodal decomposition into regions
with small and large concentration of the magnetic component is a generic
property of diluted magnetic semiconductors and diluted magnetic oxides showing
high apparent Curie temperature.Comment: 21 pages, 30 figures, submitted to Phys. Rev.
Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells
We report on the observation of the Ising quantum Hall ferromagnet with Curie
temperature as high as 2 K in a modulation-doped (Cd,Mn)Te
heterostructure. In this system field-induced crossing of Landau levels occurs
due to the giant spin-splitting effect. Magnetoresistance data, collected over
a wide range of temperatures, magnetic fields, tilt angles, and electron
densities, are discussed taking into account both Coulomb electron-electron
interactions and sd coupling to Mn spin fluctuations. The critical behavior
of the resistance ``spikes'' at corroborates theoretical
suggestions that the ferromagnet is destroyed by domain excitations.Comment: revised, 4 pages, 4 figure
Properties and characterization of ALD grown dielectric oxides for MIS structures
We report on an extensive structural and electrical characterization of
under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer
Deposition (ALD). We elaborate the ALD growth window for these oxides, finding
that the 40-100 nm thick layers of both oxides exhibit fine surface flatness
and required amorphous structure. These layers constitute a base for further
metallic gate evaporation to complete the Metal-Insulator-Semiconductor
structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the
leakage current staying below the state-of-the-art level of 1 nA. At these
conditions the displaced charge corresponds to a change of the sheet carrier
density of 3 \times 1013 cm-2, what promises an effective modulation of the
micromagnetic properties in diluted ferromagnetic semiconductors.Comment: 8 pages, 5 figures, 14 reference
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