2,084 research outputs found
Hole concentration in a diluted ferromagnetic semiconductor
We consider a mean-field approach to the hole-mediated ferromagnetism in
III-V Mn-based semiconductor compounds to discuss the dependence of the hole
density on that of Mn sites in Ga_{1-x}Mn_xAs. The hole concentration, p, as a
function of the fraction of Mn sites, x, is parametrized in terms of the
product m*J_{pd}^2 (where m* is the hole effective mass and J_{pd} is the
Kondo-like hole/local-moment coupling), and the critical temperature Tc. By
using experimental data for these quantities, we have established the
dependence of the hole concentration with x, which can be associated with the
occurrence of a reentrant metal-insulator transition taking place in the hole
gas. We also calculate the dependence of the Mn magnetization with x, for
different temperatures (T), and found that as T increases, the width of the
composition-dependent magnetization decreases drammatically, and that the
magnetization maxima also decreases, indicating the need for quality-control of
Mn-doping composition in diluted magnetic semiconductor devices.Comment: 4 pages, 3 figures, RevTeX 3; Fig. 1 changed, new references adde
Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range
We report on a study of the ac conductivity and magneto-optical properties of
metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible
spectrum. Our analysis is based on the successful kinetic exchange model for
(III,Mn)V ferromagnetic semiconductors. We perform the calculations within the
Kubo formalism and treat the disorder effects pertubatively within the Born
approximation, valid for the metallic regime. We consider an eight-band
Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a
ten-band model with additional dispersionless bands simulating
phenomenologically the upper-mid-gap states induced by antisite and
interstitial impurities. These models qualitatively account for
optical-absorption experiments and predict new features in the mid-infrared
Kerr angle and magnetic-circular-dichroism properties as a function of Mn
concentration and free carrier density.Comment: 10 pages, 7 figures, some typos correcte
Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells
We report on the observation of the Ising quantum Hall ferromagnet with Curie
temperature as high as 2 K in a modulation-doped (Cd,Mn)Te
heterostructure. In this system field-induced crossing of Landau levels occurs
due to the giant spin-splitting effect. Magnetoresistance data, collected over
a wide range of temperatures, magnetic fields, tilt angles, and electron
densities, are discussed taking into account both Coulomb electron-electron
interactions and sd coupling to Mn spin fluctuations. The critical behavior
of the resistance ``spikes'' at corroborates theoretical
suggestions that the ferromagnet is destroyed by domain excitations.Comment: revised, 4 pages, 4 figure
Effect of inversion asymmetry on the intrinsic anomalous Hall effect in ferromagnetic (Ga,Mn)As
The relativistic nature of the electron motion underlies the intrinsic part
of the anomalous Hall effect, believed to dominate in ferromagnetic (Ga,Mn)As.
In this paper, we concentrate on the crystal band structure as an important
facet to the description of this phenomenon. Using different k.p and
tight-binding computational schemes, we capture the strong effect of the bulk
inversion asymmetry on the Berry curvature and the anomalous Hall conductivity.
At the same time, we find it not to affect other important characteristics of
(Ga,Mn)As, namely the Curie temperature and uniaxial anisotropy fields. Our
results extend the established theories of the anomalous Hall effect in
ferromagnetic semiconductors and shed new light on its puzzling nature
Disorder-induced pseudodiffusive transport in graphene nanoribbons.
We study the transition from ballistic to diffusive and localized transport in graphene nanoribbons in the presence of binary disorder, which can be generated by chemical adsorbates or substitutional doping. We show that the interplay between the induced average doping (arising from the nonzero average of the disorder) and impurity scattering modifies the traditional picture of phase-coherent transport. Close to the Dirac point, intrinsic evanescent modes produced by the impurities dominate transport at short lengths giving rise to a regime analogous to pseudodiffusive transport in clean graphene, but without the requirement of heavily doped contacts. This intrinsic pseudodiffusive regime precedes the traditional ballistic, diffusive, and localized regimes. The last two regimes exhibit a strongly modified effective number of propagating modes and a mean free path which becomes anomalously large close to the Dirac point
Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors
The magnetic behavior of insulating doped diluted magnetic semiconductors
(DMS) is characterized by the interaction of large collective spins known as
bound magnetic polarons. Experimental measurements of the susceptibility of
these materials have suggested that the polaron-polaron interaction is
ferromagnetic, in contrast to the antiferromagnetic carrier-carrier
interactions that are characteristic of nonmagnetic semiconductors. To explain
this behavior, a model has been developed in which polarons interact via both
the standard direct carrier-carrier exchange interaction (due to virtual
carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due
to the interactions of polarons with magnetic ions in an interstitial region).
Using a variational procedure, the optimal values of the model parameters were
determined as a function of temperature. At temperatures of interest, the
parameters describing polaron-polaron interactions were found to be nearly
temperature-independent. For reasonable values of these constant parameters, we
find that indirect ferromagnetic interactions can dominate the direct
antiferromagnetic interactions and cause the polarons to align. This result
supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure
EPR and ferromagnetism in diluted magnetic semiconductor quantum wells
Motivated by recent measurements of electron paramagnetic resonance (EPR)
spectra in modulation-doped CdMnTe quantum wells, [F.J. Teran {\it et al.},
Phys. Rev. Lett. {\bf 91}, 077201 (2003)], we develop a theory of collective
spin excitations in quasi-two-dimensional diluted magnetic semiconductors
(DMSs). Our theory explains the anomalously large Knight shift found in these
experiments as a consequence of collective coupling between Mn-ion local
moments and itinerant-electron spins. We use this theory to discuss the physics
of ferromagnetism in (II,Mn)VI quantum wells, and to speculate on the
temperature at which it is likely to be observed in n-type modulation doped
systems.Comment: 4 pages, 1 figur
Properties and characterization of ALD grown dielectric oxides for MIS structures
We report on an extensive structural and electrical characterization of
under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer
Deposition (ALD). We elaborate the ALD growth window for these oxides, finding
that the 40-100 nm thick layers of both oxides exhibit fine surface flatness
and required amorphous structure. These layers constitute a base for further
metallic gate evaporation to complete the Metal-Insulator-Semiconductor
structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the
leakage current staying below the state-of-the-art level of 1 nA. At these
conditions the displaced charge corresponds to a change of the sheet carrier
density of 3 \times 1013 cm-2, what promises an effective modulation of the
micromagnetic properties in diluted ferromagnetic semiconductors.Comment: 8 pages, 5 figures, 14 reference
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