Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides

The waveguide losses from a range of surface plasmon and double metal waveguides for Ge/Si1−xGex THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 μm wavelength). Double metal waveguides demonstrate lower losses than surface plasmonic guiding with minimum losses for a 10 μm thick active gain region with silver metal of 21 cm−1 at 300 K reducing to 14.5 cm−1 at 10 K. Losses for silicon foundry compatible metals including Al and Cu are also provided for comparison and to provide a guide for gain requirements to enable lasers to be fabricated in commercial silicon foundries. To allow these losses to be calculated for a range of designs, the complex refractive index of a range of nominally undoped Si1−xGex with x = 0.7, 0.8 and 0.9 and doped Ge heterolayers were extracted from Fourier transform infrared spectroscopy measurements between 0.1 and 10 THz and from 300 K down to 10 K. The results demonstrate losses comparable to similar designs of GaAs/AlGaAs quantum cascade laser plasmon waveguides indicating that a gain threshold of 15.1 cm−1 and 23.8 cm−1 are required to produce a 4.79 THz Ge/SiGe THz laser at 10 K and 300 K, respectively, for 2 mm long double metal waveguide quantum cascade lasers with facet coatings

Terahertz absorption-saturation and emission from electron-doped germanium quantum wells

We study radiative relaxation at terahertz frequencies in n-type Ge/SiGe quantum wells, optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling barrier are designed to operate as a three-level laser system with non-equilibrium population generated by optical pumping around the 1→3 intersubband transition at 10 THz. The non-equilibrium subband population dynamics are studied by absorption-saturation measurements and compared to a numerical model. In the emission spectroscopy experiment, we observed a photoluminescence peak at 4 THz, which can be attributed to the 3→2 intersubband transition with possible contribution from the 2→1 intersubband transition. These results represent a step towards silicon-based integrated terahertz emitters

Profibrotic epithelial phenotype:a central role for MRTF and TAZ

Abstract Epithelial injury is a key initiator of fibrosis but - in contrast to the previous paradigm - the epithelium in situ does not undergo wide-spread epithelial-mesenchymal/myofibroblast transition (EMT/EMyT). Instead, it assumes a Profibrotic Epithelial Phenotype (PEP) characterized by fibrogenic cytokine production. The transcriptional mechanisms underlying PEP are undefined. As we have shown that two RhoA/cytoskeleton-regulated transcriptional coactivators, Myocardin-related transcription factor (MRTF) and TAZ, are indispensable for EMyT, we asked if they might mediate PEP as well. Here we show that mechanical stress (cyclic stretch) increased the expression of transforming growth factor-β1 (TGFβ1), connective tissue growth factor (CTGF), platelet-derived growth factor and Indian Hedgehog mRNA in LLC-PK1 tubular cells. These responses were mitigated by siRNA-mediated silencing or pharmacological inhibition of MRTF (CCG-1423) or TAZ (verteporfin). RhoA inhibition exerted similar effects. Unilateral ureteral obstruction, a murine model of mechanically-triggered kidney fibrosis, induced tubular RhoA activation along with overexpression/nuclear accumulation of MRTF and TAZ, and increased transcription of the above-mentioned cytokines. Laser capture microdissection revealed TAZ, TGFβ1 and CTGF induction specifically in the tubular epithelium. CCG-1423 suppressed total renal and tubular expression of these proteins. Thus, MRTF regulates epithelial TAZ expression, and both MRTF and TAZ are critical mediators of PEP-related epithelial cytokine production

Control of electron-state coupling in asymmetric Ge/Si−Ge quantum wells

Theoretical predictions indicate that the n-type Ge / Si − Ge multi-quantum-well system is the most promising material for the realization of a Si -compatible THz quantum cascade laser operating at room temperature. To advance in this direction, we study, both experimentally and theoretically, asymmetric coupled multi-quantum-well samples based on this material system, that can be considered as the basic building block of a cascade architecture. Extensive structural characterization shows the high material quality of strain-symmetrized structures grown by chemical vapor deposition, down to the ultrathin barrier limit. Moreover, THz absorption spectroscopy measurements supported by theoretical modeling unambiguously demonstrate inter-well coupling and wavefunction tunneling. The agreement between experimental data and simulations allows us to characterize the tunneling barrier parameters and, in turn, achieve highly controlled engineering of the electronic structure in forthcoming unipolar cascade systems based on n-type Ge / Si − Ge multi-quantum-wells

Control of Electron-State Coupling in Asymmetric Ge/Si-Ge Quantum Wells

Theoretical predictions indicate that the n-type Ge/Si-Ge multi-quantum-well system is the most promising material for the realization of a Si-compatible THz quantum cascade laser operating at room temperature. To advance in this direction, we study, both experimentally and theoretically, asymmetric coupled multi-quantum-well samples based on this material system, that can be considered as the basic building block of a cascade architecture. Extensive structural characterization shows the high material quality of strain-symmetrized structures grown by chemical vapor deposition, down to the ultrathin barrier limit. Moreover, THz absorption spectroscopy measurements supported by theoretical modeling unambiguously demonstrate inter-well coupling and wavefunction tunneling. The agreement between experimental data and simulations allows us to characterize the tunneling barrier parameters and, in turn, achieve highly controlled engineering of the electronic structure in forthcoming unipolar cascade systems based on n-type Ge/Si-Ge multi-quantum-wells

Cannabis sativa L. inflorescences from monoecious cultivars grown in central Italy: an untargeted chemical characterization from early flowering to ripening

The chemical composition of the inflorescences from four Cannabis sativa L. monoecious cultivars (Ferimon, Uso-31, Felina 32 and Fedora 17), recently introduced in the Lazio Region, was monitored over the season from June to September giving indications on their sensorial, pharmaceutical/nutraceutical proprieties. Both untargeted (NMR) and targeted (GC/MS, UHPLC, HPLC-PDA/FD and spectrophotometry) analyses were carried out to identify and quantify compounds of different classes (sugars, organic acids, amino acids, cannabinoids, terpenoids, phenols, tannins, flavonoids and biogenic amines). All cultivars in each harvesting period showed a THC content below the Italian legal limit, although in general THC content increased over the season. Citric acid, malic acid and glucose showed the highest content in the late flowering period, whereas the content of proline drastically decreased after June in all cultivars. Neophytadiene, nerolidol and chlorogenic acid were quantified only in Felina 32 cultivar, characterized also by a very high content of flavonoids, whereas alloaromadendrene and trans-cinnamic acid were detected only in Uso-31 cultivar. Naringenin and naringin were present only in Fedora 17 and Ferimon cultivars, respectively. Moreover, Ferimon had the highest concentration of biogenic amines, especially in July and August. Cadaverine was present in all cultivars but only in September. These results suggest that the chemical composition of Cannabis sativa L. inflorescences depends on the cultivar and on the harvesting period. Producers can use this information as a guide to obtain inflorescences with peculiar chemical characteristics according to the specific use

Electron-doped SiGe Quantum Well Terahertz Emitters pumped by FEL pulses

We explore saturable absorption and terahertz photoluminescence emission in a set of n-doped Ge/SiGe asymmetric coupled quantum wells, designed as three-level systems (i.e., quantum fountain emitter). We generate a non-equilibrium population by optical pumping at the 1→3 transition energy using picosecond pulses from a free-electron laser and characterize this effect by measuring absorption as a function of the pump intensity. In the emission experiment we observe weak emission peaks in the 14–25 meV range (3–6 THz) corresponding to the two intermediate intersubband transition energies. The results represent a step towards silicon-based integrated terahertz emitters

High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers

The exploitation of intersubband transitions in Ge/SiGe quantum cascade devices could pave the way towards the integration of THz light emitters into the silicon-based technology. Aiming at the realization of a Ge/SiGe Quantum Cascade Laser (QCL), we investigate optical and structural properties of n-type Ge/SiGe coupled quantum well systems. The samples have been investigated by means of X-ray diffraction, scanning transmission electron microscopy, atom probe tomography and Fourier Transform Infrared absorption spectroscopy to assess the growth capability with respect to QCL design requirements, carefully identified by means of modelling based on the non-equilibrium Green function formalism