Low temperature atomic layer deposition of platinum using (methylcyclopentadienyl)trimethylplatinum and ozone

Thermal atomic layer deposition (ALD) of platinum is usually achieved using molecular oxygen as the reactant gas and deposition temperatures in the 250-300 degrees C range. In this work, crystalline thin films of metallic Pt have been grown by ALD at temperatures as low as 100 degrees C using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) as the Pt precursor and ozone as the reactant gas. The novel process is characterized by a constant growth rate of 0.45 angstrom per cycle within the 100-300 degrees C temperature window. The Pt films are uniform with low impurity levels and close-to-bulk resistivities even at the lowest deposition temperature. We show that the initial growth on SiO2 surfaces is nucleation-controlled and islandlike and demonstrate the good conformality of the low-temperature ALD process by Pt deposition on anodic alumina nanopores and mesoporous silica thin films