A cost-effective liquid phase exfoliation process for large 2D-MoS2 nanosheets and its application in FET

2D-TMDC materials are supposed to be suitable materials for the electronic industry requirements due to tunable bandgap. 2D-MoS2 has an advantage over the graphene as it has direct bandgap and high on/off ratio. In this work, 2D-MoS2 nanostructures have been synthesized using a simple and cost-effective liquid phase exfoliation (LPE) method in the organic solvent without any additives. The synthesized MoS2 has up to 4-layer thick nanosheets structure which is confirm by the FESEM and Raman studies. From the UV-Visible absorption spectroscopy, the bandgap of the material is found to be 1.79 eV. This synthesized material is used as the channel material in the field effect transistor. The field effect transistor (FET) device have been fabricated in the top-gate configuration. It has been found that the current on/off ratio is of the order of 10(4

Influence of temperature on the dielectric behaviour of Co²⁺ substituted Li-Ni-Mn ferrites

199-202Li-Ni-Mn ferrites substituted with Co²⁺ having compositional formula Li₀․₄₅₋x/₂Ni₀․₁Mn₀․₁CoxFe₂․₃₅₋x/₂O₄ with x ranging from 0 to 0.1 in steps of 0.02 were prepared by the conventional ceramic technique. The temperature dependence of the dielectric constant and loss tangent have been investigated. The dielectric constant increased with the increase of temperature, the increase being more pronounced at lower frequencies indicating the dominant role played by the interfacial polarisation. Dielectric constant studied as a function of temperature showed peaks, which gets shifted to higher temperature as the frequency increased. The dielectric loss tangent was observed to increase with temperature. The results obtained are explained on the basis of Debye’s equation