A Reaction Diffusion Model Of Pattern Formation In Clustering Of Adatoms On Silicon Surfaces

We study a reaction diffusion model which describes the formation of patterns on surfaces having defects. Through this model, the primary goal is to study the growth process of Ge on Si surface. We consider a two species reaction diffusion process where the reacting species are assumed to diffuse on the two dimensional surface with first order interconversion reaction occuring at various defect sites which we call reaction centers. Two models of defects, namely a ring defect and a point defect are considered separately. As reaction centers are assumed to be strongly localized in space, the proposed reaction-diffusion model is found to be exactly solvable. We use Green's function method to study the dynamics of reaction diffusion processes. Further we explore this model through Monte Carlo (MC) simulations to study the growth processes in the presence of a large number of defects. The first passage time statistics has been studied numerically. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4757592]Microelectronics Research Cente

Nanodot to Nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si (100)

We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this critical size. Larger islands adopt a rectangular shape with ever increasing length and the width decreasing to an asymptotic value of ~25 nm. This produces long wires of nearly constant width.We have observed nanowire islands with aspect ratios as large as ~ 20:1. The long nanowire heterostructures grow partly above (~ 3 nm) the surface, but mostly into (~17 nm) the Si substrate. These self-organized nanostructures behave as nanoscale Schottky diodes. They may be useful in Si-nanofabrication and find potential application in constructing nano devices.Comment: 9 pages, 7 figure

Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(111)-(7x7) surfaces: Influence of short range order on the substrate

Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short range (7x7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(111)-(7x7) surface shows that only the 1/7th order spots are present on the air-oxidized surface. The oxide layer is ~ 2-3 nm thick, as revealed by cross-sectional transmission electron microscopy (XTEM). Growth of Ag islands on these air-oxidized Si(111)-(7x7) surfaces has been investigated by in-situ RHEED and STM and ex-situ XTEM and scanning electron microscopy. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher substrate temperatures. For deposition at 550{\deg}C face centered cubic Ag nanoislands grow with a predominant epitaxial orientation [1 -1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si along with its twin [-1 1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si, as observed for epitaxial growth of Ag on Si(111) surfaces. The twins are thus rotated by a 180{\deg} rotation of the Ag unit cell about the Si [111] axis. It is intriguing that Ag nanoislands follow an epitaxial relationship with the Si(111) substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently the short range order on the oxide surface influences the crystallographic orientation of the Ag nanoislands.Comment: 10 figure

Phenomenology of Light Sneutrino Dark Matter in cMSSM/mSUGRA with Inverse Seesaw

We study the possibility of a light Dark Matter (DM) within a constrained Minimal Supersymmetric Standard Model (cMSSM) framework augmented by a SM singlet-pair sector to account for the non-zero neutrino masses by inverse seesaw mechanism. Working within a 'hybrid' scenario with the MSSM sector fixed at high scale and the singlet neutrino sector at low scale, we find that, contrary to the case of the usual cMSSM where the neutralino DM cannot be very light, we can have a light sneutrino DM with mass below 100 GeV satisfying all the current experimental constraints from cosmology, collider as well as low-energy experiments. We also note that the supersymmetric inverse seesaw mechanism with sneutrino as the lightest supersymmetric partner can have enhanced same-sign dilepton final states with large missing transverse energy (mET) coming from the gluino- and squark-pair as well as the squark-gluino associated productions and their cascade decay through charginos. We present a collider study for the same-sign dilepton+jets+mET signal in this scenario and propose some distinctions with the usual cMSSM. We also comment on the implications of such a light DM scenario on the invisible decay width of an 125 GeV Higgs boson.Comment: 24 pages, 4 figures, 7 tables; matches published versio

Electroweak Symmetry Breaking at the LHC

One of the major goals of the Large Hadron Collider is to probe the electroweak symmetry breaking mechanism and the generation of the masses of the elementary particles. We review the physics of the Higgs sector in the Standard Model and some of its extensions such as supersymmetric theories and models of extra dimensions. The prospects for discovering the Higgs particles at the LHC and the study of their fundamental properties are summarised.Comment: 27 pages, 45 figures, uses LaTeX (insa.sty). Invited review for volume on LHC physics to celebrate the Platinum Jubilee of the Indian National Science Academy, edited by Amitava Datta, Biswarup Mukhopadhyaya and Amitava Raychaudhuri. Expanded the acronym in the title in the annoncement. No other change in the text or reference