Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D

The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE)

Numerical simulation of graded band gap GaAs/AlGaAs heterojunction solar cell by AMPS-1D

The conduction band discontinuity or spike in an abrupt heterojunction p+ GaAs / NAl0.4 Ga0.6As solar cell can hinder the separation of hole-electron by electric field. This paper analyzes the GaAs /AlxGa1-xAs/Al0.4Ga0.6As based solar cell performance by AMPS-1D numerical modeling. The affect of graded band gap region in the interface between the emitter (GaAs) and base (Al0.4Ga0.6As) on the solar cell’s performance is investigated. Among the factors studied are thickness of graded band gap region, thickness of emitter layer of the cells. In this study, a width 0.14µm has been required to eliminate the spike and improved the performance of solar cell. Keywords: heterojunction solar cell; graded band gap; AMPS-1D

Optimizing the Emitter Layer for Higher Efficiency Solar Cell Based SiGe Using AMPS1D

The thin-film SiGe is considered as promising candidate to meet the outstanding need for photovoltaic applications with enhanced adsorption characteristics and improved conversion efficiency [1-6]. In this paper, we simulated a solar cell type SiGe using AMPS1D (Analysis of Microelectronic and photonic structure) developed at Pennsylvania State University, to analyze emitter layer (thickness, doping) and we studied their influence on the photovoltaic solar cell. The simulation result shows that the maximum efficiency of 16.181 % has been achieved, with short circuit current density of 32.657 mA/cm2, open circuit voltage of 0.61 V and fill factor of 0.809. The obtained results show that the proposed design can be considered as a potential candidate for high performance photovoltaic applications

Effect of Temperature on the AlGaAs/GaAs Tandem Solar Cell for Concentrator Photovoltaic Performances

Multijunction solar cells for concentrator photovoltaic (CPV) systems have attracted increasing attention in recent years for their very high conversion efficiencies. But there is a problem in this type of solar cells (CPV) is to increase the temperature if it has been augmenting the concentration ratio. In this paper, we studied the effect of the concentration photovoltaic in a high-efficiency double-junction devices solar cell on temperature solar cell and its impact on the photocurrent, the efficiency and open circuit voltage. In this study, the top cell is made of AlGaAs (1.73 eV) while the bottom cell is made of GaAs (1.42 eV) between them a tunnel junction

The Effect of Graded Band Gap Structure Inserted in the Multijunction Solar Cell

We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-graded junction AlGaAs/GaInAs device, which can be experimentally fabricated. By optimizing the band-gap combination of the considered structure, an improvement of conversion efficiency has been observed in comparison to the conventional AlGaAs/GaInAs system. For the suggested graded band-gap combination, our calculation indicates that the attainable efficiency can be enhanced up to 34% ( AM1.5d). Keywords: band gap gradient, multijunction solar cells, AlGaAs, GaInA

Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D

The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE)

Optimizing the Emitter Layer for Higher Efficiency Solar Cell Based SiGe Using AMPS1D

The thin-film SiGe is considered as promising candidate to meet the outstanding need for photovoltaic applications with enhanced adsorption characteristics and improved conversion efficiency [1-6]. In this paper, we simulated a solar cell type SiGe using AMPS1D (Analysis of Microelectronic and photonic structure) developed at Pennsylvania State University, to analyze emitter layer (thickness, doping) and we studied their influence on the photovoltaic solar cell. The simulation result shows that the maximum efficiency of 16.181 % has been achieved, with short circuit current density of 32.657 mA/cm2, open circuit voltage of 0.61 V and fill factor of 0.809. The obtained results show that the proposed design can be considered as a potential candidate for high performance photovoltaic applications

Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D

In this work we have studied The effect of thickness of the intrinsic layer in the PIN structure of InGaN tandem solar cells such as photo generation rate, efficiency and recombination rate through the cells. Improvement around of 13 % of PIN tandem solar cell over PN tandem solar cell is observed for low doping concentration (NA = 1016 cm – 3; ND = 1018 cm – 3) and surface recombination (103cm/s). The photo-generated shortcircuit current density (Jsc) and the open-circuit voltage (Voc) of structures under AM 1,5G (one sun) illumination, are simulated for different thickness of intrinsic layer varying from 50 nm to 350 nm

Effect of Temperature on the AlGaAs/GaAs Tandem Solar Cell for Concentrator Photovoltaic Performances

Multijunction solar cells for concentrator photovoltaic (CPV) systems have attracted increasing attention in recent years for their very high conversion efficiencies. But there is a problem in this type of solar cells (CPV) is to increase the temperature if it has been augmenting the concentration ratio. In this paper, we studied the effect of the concentration photovoltaic in a high-efficiency double-junction devices solar cell on temperature solar cell and its impact on the photocurrent, the efficiency and open circuit voltage. In this study, the top cell is made of AlGaAs (1.73 eV) while the bottom cell is made of GaAs (1.42 eV) between them a tunnel junction