Graphene on metallic surfaces

The present manuscript summarizes the modern view on the problem of the graphene–metal interaction. Presently, the close-packed surfaces of d metals are used as templates for the preparation of highly-ordered graphene layers. Different classifications can be introduced for these systems: graphene on lattice-matched and graphene on lattice-mismatched surfaces where the interaction with the metallic substrate can be either “strong” or “weak”. Here these classifications, with the focus on the specific features in the electronic structure in all cases, are considered on the basis of large amount of experimental and theoretical data, summarized and discussed. The perspectives of the graphene–metal interfaces in fundamental and applied physics and chemistry are pointed out

Growth and electronic structure of graphene on semiconducting Ge(110)

The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc. Here we present the growth of graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and the study of the structural and electronic properties of the obtained interface. We found that graphene interacts weakly with the underlying Ge(110) substrate that keeps graphene's electronic structure almost intact promoting this interface for future graphene-semiconductor applications. The effect of dopants in Ge on the electronic properties of graphene is also discussed.Comment: submitted on 06.04.201