First demonstration and field trial on multi-user UDWDM-PON full duplex PSK-PSK with single monolithic integrated dual-output-DFB-SOA based ONUs

© 2016 [2016 Optical Society of America.]. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.We demonstrate a monolithically integrated dual-output DFB-SOA, and conduct the field trial on a multi-user bidirectional coherent ultradense wavelength division multiplexing-passive optical network (UDWDM-PON). To the best of our knowledge, this is the first achievement of simplified single integrated laser-based neighboring coherent optical network units (ONUs) with a 12.5 GHz channel spaced ultra-dense access network, including both downstream and upstream, taking the benefits of low footprint and low-temperature dependence.Peer ReviewedPostprint (author's final draft

Increasing the speed of an InP-based integration platform by introducing high speed electro-absorption modulators

We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block (BB) is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low DC bias voltage below 1 V at increased temperature, as well as operation in a semi-cooled environment, tested in the range of 20−60∘C . Furthermore, we improve the intrinsic S-parameter response with a co-design circuit. The intrinsic 3-dB bandwidth of a 100 μm-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three time speed increase of the existing platform, from previously offered 9 GHz (using an electro-optical modulator) to 24 GHz shown in this work

Influence of termination load placement on electro-absorption modulator performance

In this work we investigate a module of the electro-absorption modulator (EAM) and ways to improve the electrical response in order to increase its bandwidth. Starting from the empirical model of the modulator, we utilize the combination of the termination load placement and design of the transmission line on the alumina in order to improve the bandwidth. The EAM is designed on InP platform on n-substrate for further use in monolithic integrated photonic circuits for transmitters in optical telecommunications

Increasing the speed of an InP-based integration platform by introducing high speed electro-absorption modulators

We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block (BB) is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low DC bias voltage below 1 V at increased temperature, as well as operation in a semi-cooled environment, tested in the range of 20−60∘C . Furthermore, we improve the intrinsic S-parameter response with a co-design circuit. The intrinsic 3-dB bandwidth of a 100 μm-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three time speed increase of the existing platform, from previously offered 9 GHz (using an electro-optical modulator) to 24 GHz shown in this work