Molecular and Functional Analysis of Genes Underlying Poag Pathogenesis

Glaucoma affects approximately 70 million people and is the second leading cause of irreversible blindness worldwide. Among the various subtypes, Primary open-angle glaucoma (POAG) is the most common form of this disease. POAG is a mutifactorial complex disorder where both environmental and genetic factors precipitate the disease. It has been suggested that 72% of POAG cases have some familial component, but on rare occasion it follows a Mendelian pattern of inheritance. It is characterized by progressive loss of retinal ganglion cells and atrophy of the optic nerve head, often associated with elevated intraocular pressure (IOP) caused by the reduced outflow of aqueous humor through the trabecular meshwork (TM), a meshwork of tissue chamber of the eye. disease pathogenesis. The objectives of my study for this dissertation are: a familial history of glaucoma or high intraocular pressure

Certified Organization, Volume3, Special Issue 6

ABSTRACT: In this paper a broadband microstrip patch antenna is design for broad band communication. This article is presented for compactness and broadband wireless communication. The proposed design is covering the frequency ranges from 4.78 GHz to 10.5 GHz. The simulated results of the proposed microstrip patch antenna parameters such as return loss; bandwidth, radiation patterns, VSWR and gain are presented. The proposed antenna is designed using Ansoft Designer software and two operating frequencies are obtained at the frequencies 5.8 GHZ and 9.9 GHz in the frequency range from 4.78 GHz to 10.5 GHz

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with intrinsic band gaps (1–2 eV) are considered promising candidates for channel materials in next-generation transistors. Low-resistance metal contacts to mTMDs are crucial because currently they limit mTMD device performances. Hence, a comprehensive understanding of the atomistic nature of metal contacts to these 2D crystals is a fundamental challenge, which is not adequately addressed at present. In this paper, we report a systematic study of metal-mTMD contacts with different geometries (top contacts and edge contacts) by ab initio density-functional theory calculations, integrated with Mulliken population analysis and a semiempirical van der Waals dispersion potential model (which is critical for 2D materials and not well treated before). Particularly, In, Ti, Au, and Pd, contacts to monolayer MoS_{2} and WSe_{2} as well as Mo-MoS_{2} and W-WSe_{2} contacts are evaluated and categorized, based on their tunnel barriers, Schottky barriers, and orbital overlaps. Moreover, going beyond Schottky theory, new physics in such contact interfaces is revealed, such as the metallization of mTMDs and abnormal Fermi level pinning. Among the top contacts to MoS_{2}, Ti and Mo show great potential to form favorable top contacts, which are both n-type contacts, while for top contacts to WSe_{2}, W or Pd exhibits the most advantages as an n- or p-type contact, respectively. Moreover, we find that edge contacts can be highly advantageous compared to top contacts in terms of electron injection efficiency. Our formalism and the results provide guidelines that would be invaluable for designing novel 2D semiconductor devices

Subthreshold-swing physics of tunnel field-effect transistors

Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade. This letter reports a comprehensive study of the SS of TFETs by examining the effects of electrostatics and material parameters of TFETs on their SS through a physics based analytical model. Based on the analysis, an intrinsic SS degradation effect in TFETs is uncovered. Meanwhile, it is also shown that designing a strong onset condition, quantified by an introduced concept - “onset strength”, for TFETs can effectively overcome this degradation at the onset stage, and thereby achieve ultra-sharp switching characteristics. The uncovered physics provides theoretical support to recent experimental results, and forward looking insight into more advanced TFET design

A study of onychomycosis at a tertiary care hospital in Eastern Bihar

Background: Onychomycosis (OM) is a major public health problem which is increasing worldwide. It is associated with high morbidity and causes physical, psychological, and occupational problems in patients. Aims: This study aims to study the pattern of etiological agents, clinical features, and severity assessment of OM in this part of India. Materials and Methods: Sixty eight clinically suspected patients with positive potassium hydroxide and fungal culture were studied. Results: Males were infected more often than females (1.61:1). The most common age group affected was 21–40 years. Finger nails were affected more frequently than toe nails. Distal and lateral subungual OM was the most common (48 cases, 70.59%) clinical pattern. For most of the patients (66.18%), nail involvement was severe. Discoloration was the most common (67 cases, 98.53%) change, followed by subungual hyperkeratosis (51 cases, 75%). Principal causative agents were dermatophytes (55 cases, 80.88%) with Trichophyton rubrum being the most common one (35 cases, 51.47%). In 9 (13.23%) cases, Candida albicans, in 6 (8.82%) Aspergillus niger and in 1 (1.47%) case Acremonium sp. (AC) have been isolated as the sole causative agent. In 2 (2.94%) cases, mixed infection with dermatophyte and Aspergillus and in 1 (1.47%) case dermatophyte and Candida were noted. Conclusion: Although dermatophytes were the most common causative agent of OM, nondermatophytic molds, and yeasts were also encountered. The genus and species identification helps in the proper diagnosis and management. Morphological changes in nail may help in presumptive diagnosis of OM