Transient THz Emission and Effective Mass Determination in Highly Resistive GaAs Crystals Excited by Femtosecond Optical Pulses

We present comprehensive studies on the emission of broadband, free-space THz transients from several highly resistive GaAs samples excited by femtosecond optical pulses. Our test samples are characterized by different degrees of disorder, ranging from nitrogen-implanted to semi-insulating and annealed semi-insulating GaAs crystals. In our samples, we clearly observed transient THz emissions due to the optical rectification effect, as well as due to the presence of the surface depletion electrical field. Next, we arranged our experimental setup in such way that we could observe directly how the amplitude of surface-emitted THz optical pulses is affected by an applied, in-plane magnetic field. We ascribe this effect to the Lorentz force that additionally accelerates optically excited carriers. The magnetic-field factor η is a linear function of the applied magnetic field and is the largest for an annealed GaAs sample, while it is the lowest for an N-implanted GaAs annealed at the lowest (300 °C) temperature. The latter is directly related to the longest and shortest trapping times, respectively, measured using a femtosecond optical pump-probe spectroscopy technique. The linear dependence of the factor η on the trapping time enabled us to establish that, for all samples, regardless of their crystalline structure, the electron effective mass was equal to 0.059 of the electron mass m0, i.e., it was only about 6% smaller than the generally accepted 0.063m0 value for GaAs with a perfect crystalline structure

Magnetic-Field Enhancement of THz Surface Emission in Highly Resistive GaAs

Irradiation of semiconductor surfaces with femtosecond optical laser pulses is one of the common techniques for broadband, free-space THz transient generation. We demonstrate that the amplitude of surface-emitted THz pulses scales linearly with an applied, external, in-plane magnetic field. We studied the effect in several highly resistive GaAs samples and ascribe it to the Lorentz force that additionally accelerates optically excited carriers

Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy

The increase of device lifetime and reliability of THz photomixers will play an essential role in their possible future application. Therefore, their optimal work conditions/operation range, i.e., the maximal incident optical power should be experimentally estimated. We fabricated and tested THz photomixer devices based on nitrogen-implanted GaAs integrated with a Bragg reflector. Raman spectroscopy was applied to investigate the material properties and to disclose any reversible or irreversible material changes. The results indicate that degradation effects in the photomixer structures/material could be avoided if the total optical power density does not exceed levels of about 0.7 mW/µm2 for 100 min of operation. Furthermore, the investigations performed during 1000 min of optical exposure on the photomixer devices’ central region comprising interdigitated metal-semiconductor-metal (MSM) structures suggest a reversible “curing” mechanism if the power density level of ~0.58 mW/µm2 is not exceeded. Long-term operation (up to 1000 h) reveals that the photomixer structures can withstand an average optical power density of up to ~0.4 mW/µm2 without degradation when biased at 10 V. Besides the decrease of the position of the A1g (LO) Raman mode from ~291 cm−1 down to ~288 cm−1 with increasing optical power density and operation time, broad Raman modes evolve at about 210 cm−1, which can be attributed to degradation effects in the active photomixer/MSM area. In addition, the performed carrier lifetime and photomixer experiments demonstrated that these structures generated continuous wave sub-THz radiation efficiently as long as their optimal work conditions/operation range were within the limits established by our Raman studies

Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy

The increase of device lifetime and reliability of THz photomixers will play an essential role in their possible future application. Therefore, their optimal work conditions/operation range, i.e., the maximal incident optical power should be experimentally estimated. We fabricated and tested THz photomixer devices based on nitrogen-implanted GaAs integrated with a Bragg reflector. Raman spectroscopy was applied to investigate the material properties and to disclose any reversible or irreversible material changes. The results indicate that degradation effects in the photomixer structures/material could be avoided if the total optical power density does not exceed levels of about 0.7 mW/µm2 for 100 min of operation. Furthermore, the investigations performed during 1000 min of optical exposure on the photomixer devices’ central region comprising interdigitated metal-semiconductor-metal (MSM) structures suggest a reversible “curing” mechanism if the power density level of ~0.58 mW/µm2 is not exceeded. Long-term operation (up to 1000 h) reveals that the photomixer structures can withstand an average optical power density of up to ~0.4 mW/µm2 without degradation when biased at 10 V. Besides the decrease of the position of the A1g (LO) Raman mode from ~291 cm−1 down to ~288 cm−1 with increasing optical power density and operation time, broad Raman modes evolve at about 210 cm−1, which can be attributed to degradation effects in the active photomixer/MSM area. In addition, the performed carrier lifetime and photomixer experiments demonstrated that these structures generated continuous wave sub-THz radiation efficiently as long as their optimal work conditions/operation range were within the limits established by our Raman studies