SURFACE Ni OXIDE STUDIED BY OXYGEN K-XANES

We have studied the surface Ni oxide by XANES tecniques at the oxygen K-edge. The spectra were detected by partial yield spectroscopy, in the range of 529-570 eV at the "Grasshopper" beam line of the Frascati Syncrotron Radiation Facility. We find that the oxygen react with nickel producing an oxide where the local structure at room temperature is similar to the defective {Ni(l-glO}. Data are interpreted following the recent electronic-configuration interaction theory

MOD derived pyrochlore films as buffer layer for all-chemical YBCO coated conductors

We report a detailed study performed on La2Zr2O7 (LZO) pyrochlore material grown by Metal-Organic Decomposition (MOD) method as buffer layers for YBa2Cu3O7-x (YBCO) coated conductors. High quality epitaxial LZO thin films have been obtained on single crystal (SC) and Ni-5%at.W substrates. In order to evaluate structural and morphological properties, films have been characterized by means of X-ray diffraction analyses (XRD), atomic force microscope (AFM) and scanning electron microscope (SEM). Precursors solutions and heat treatments have been studied by thermogravimetric analyses (TG-DTA-DTG) and infrared spectra (FT-IR) with the aim of optimizing the annealing process. Thin films of YBCO have been deposited by pulsed laser ablation (PLD) on this buffer layers. The best results obtained on SC showed YBCO films with critical temperature values above 90 K, high self field critical current density values (Jc > 1 MA/cm2) and high irreversibility field values (8.3 T) at 77 K together with a rather high depinning frequency vp (0.5 T, 77 K)>44 GHz as determined at microwaves. The best results on Ni-5%at.W has been obtained introducing in the heat treatment a pyrolysis process at low temperature in air in order to remove the residual organic part of the precursor solution

Biophotons and emergence of quantum coherence : a diffusion entropy analysis

We study the emission of photons from germinating seeds using an experimental technique designed to detect light of extremely small intensity. We analyze the dark count signal without germinating seeds as well as the photon emission during the germination process. The technique of analysis adopted here, called diffusion entropy analysis (DEA) and originally designed to measure the temporal complexity of astrophysical, sociological and physiological processes, rests on Kolmogorov complexity. The updated version of DEA used in this paper is designed to determine if the signal complexity is generated either by non-ergodic crucial events with a non-stationary correlation function or by the infinite memory of a stationary but non-integrable correlation function or by a mixture of both processes. We find that dark count yields the ordinary scaling, thereby showing that no complexity of either kinds may occur without any seeds in the chamber. In the presence of seeds in the chamber anomalous scaling emerges, reminiscent of that found in neuro-physiological processes. However, this is a mixture of both processes and with the progress of germination the non-ergodic component tends to vanish and complexity becomes dominated by the stationary infinite memory. We illustrate some conjectures ranging from stress induced annihilation of crucial events to the emergence of quantum coherence

MoO3 films grown on polycrystalline Cu: Morphological, structural, and electronic properties

In this work, the authors investigated MoO3 films with thickness between 30 nm and 1 μm grown at room temperature by solid phase deposition on polycrystalline Cu substrates. Atomic force microscopy, scanning electron microscopy, and scanning tunneling microscopy revealed the presence of a homogenous MoO3 film with a "grainlike" morphology, while Raman spectroscopy showed an amorphous character of the film. Nanoindentation measurements evidenced a coating hardness and stiffness comparable with the copper substrate ones, while Auger electron spectroscopy, x-ray absorption spectroscopy, and secondary electron spectroscopy displayed a pure MoO3 stoichiometry and a work function Φ MoO3 = 6.5 eV, 1.8 eV higher than that of the Cu substrate. MoO3 films of thickness between 30 and 300 nm evidenced a metallic behavior, whereas for higher thickness, the resistance-temperature curves showed a semiconducting character

Multielectron configurations in the x-ray-absorption near-edge structure of NiO at the oxygen K threshold

The oxygen I] -edge x-ray-absorption near-edge structure of stoichiometric NiO has been measured, using partial electron yield, at the "grasshopper" line of the Frascati synchrotron-radiation facility. The main features of the spectrum in the multiple-scattering region over the 50-eV energy range beyond threshold are well predicted by the full multiple-scattering one-electron theory. The interpretation of the fine details of the spectrum requires a many-body picture; in fact, the results are in agreement with a description of NiO as an intermediate valence system, where the charge-transfer gap is smaller than Hubbard correlation

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

We studied the growth and oxidation of niobium nitride (NbN) films that we used to fabricate superconductive tunnel junctions. The thin films were deposited by dc reactive magnetron sputtering using a mixture of argon and nitrogen. The process parameters were optimized by monitoring the plasma with an optical spectroscopy technique. This technique allowed us to obtain NbN as well as good quality AlN films and both were used to obtain NbN/AlN/NbN trilayers. Lift-off lithography and selective anodization of the NbN films were used, respectively, to define the main trilayer geometry and/or to separate electrically, different areas of the trilayers. The anodized films were characterized by using Auger spectroscopy to analyze compounds formed on the surface and by means of a nano-indenter in order to investigate its mechanical and adhesion properties. The transport properties of NbN/AlN/NbN Josephson junctions obtained as a result of the above described fabrication process were measured in liquid helium at 4.2 K