3 research outputs found
Toward Ferroelectric Control of Monolayer MoS<sub>2</sub>
The
chemical vapor deposition (CVD) of molybdenum disulfide (MoS<sub>2</sub>) single-layer films onto periodically poled lithium niobate is possible
while maintaining the substrate polarization pattern. The MoS<sub>2</sub> growth exhibits a preference for the ferroelectric domains
polarized âupâ with respect to the surface so that the
MoS<sub>2</sub> film may be templated by the substrate ferroelectric
polarization pattern without the need for further lithography. MoS<sub>2</sub> monolayers preserve the surface polarization of the âupâ
domains, while slightly quenching the surface polarization on the
âdownâ domains as revealed by piezoresponse force microscopy.
Electrical transport measurements suggest changes in the dominant
carrier for CVD MoS<sub>2</sub> under application of an external voltage,
depending on the domain orientation of the ferroelectric substrate.
Such sensitivity to ferroelectric substrate polarization opens the
possibility for ferroelectric nonvolatile gating of transition metal
dichalcogenides in scalable devices fabricated free of exfoliation
and transfer
Superlinear Composition-Dependent Photocurrent in CVD-Grown Monolayer MoS<sub>2(1â<i>x</i>)</sub>Se<sub>2<i>x</i></sub> Alloy Devices
Transition
metal dichalcogenides (TMDs) have emerged as a new class of two-dimensional
materials that are promising for electronics and photonics. To date,
optoelectronic measurements in these materials have shown the conventional
behavior expected from photoconductors such as a linear or sublinear
dependence of the photocurrent on light intensity. Here, we report
the observation of a new regime of operation where the photocurrent
depends superlinearly on light intensity. We use spatially resolved
photocurrent measurements on devices consisting of CVD-grown monolayers
of TMD alloys spanning MoS<sub>2</sub> to MoSe<sub>2</sub> to show
the photoconductive nature of the photoresponse, with the photocurrent
dominated by recombination and field-induced carrier separation in
the channel. Time-dependent photoconductivity measurements show the
presence of persistent photoconductivity for the S-rich alloys, while
photocurrent measurements at fixed wavelength for devices of different
alloy compositions show a systematic decrease of the responsivity
with increasing Se content associated with increased linearity of
the currentâvoltage characteristics. A model based on the presence
of different types of recombination centers is presented to explain
the origin of the superlinear dependence on light intensity, which
emerges when the nonequilibrium occupancy of initially empty fast
recombination centers becomes comparable to that of slow recombination
centers
Postgrowth Tuning of the Bandgap of Single-Layer Molybdenum Disulfide Films by Sulfur/Selenium Exchange
We demonstrate bandgap tuning of a single-layer MoS<sub>2</sub> film on SiO<sub>2</sub>/Si <i>via</i> substitution of its sulfur atoms by selenium through a process of gentle sputtering, exposure to a selenium precursor, and annealing. We characterize the substitution process both for S/S and S/Se replacement. Photoluminescence and, in the latter case, X-ray photoelectron spectroscopy provide direct evidence of optical band gap shift and selenium incorporation, respectively. We discuss our experimental observations, including the limit of the achievable bandgap shift, in terms of the role of stress in the film as elucidated by computational studies, based on density functional theory. The resultant films are stable in vacuum, but deteriorate under optical excitation in air