Theory of traveling filaments in bistable semiconductor structures

We present a generic nonlinear model for current filamentation in semiconductor structures with S-shaped current-voltage characteristics. The model accounts for Joule self-heating of a current density filament. It is shown that the self-heating leads to a bifurcation from static to traveling filament. Filaments start to travel when increase of the lattice temperature has negative impact on the cathode-anode transport. Since the impact ionization rate decreases with temperature, this occurs for a wide class of semiconductor systems whose bistability is due to the avalanche impact ionization. We develop an analytical theory of traveling filaments which reveals the mechanism of filament motion, find the condition for bifurcation to traveling filament, and determine the filament velocity.Comment: 13 pages, 5 figure

Experimental study of direct photon emission in K- --> pi- pi0 gamma decay using ISTRA+ detector

The branching ratio in the charged-pion kinetic energy region of 55 to 90 MeV for the direct photon emission in the K- --> pi- pi0 gamma decay has been measured using in-flight decays detected with the ISTRA+ setup operating in the 25 GeV/c negative secondary beam of the U-70 PS. The value Br(DE)=[0.37+-0.39(stat)+-0.10(syst)]*10^(-5) obtained from the analysis of 930 completely reconstructed events is consistent with the average value of two stopped-kaon experiments, but it differs by 2.5 standard deviations from the average value of three in-flight-kaon experiments. The result is also compared with recent theoretical predictions.Comment: 13 pages, 8 figure