2,242 research outputs found
Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles
This paper presents the results of the characterisation of a thin, fully
depleted pixel sensor manufactured in SOI technology on high-resistivity
substrate with high momentum charged particles. The sensor is thinned to 70
m and a thin phosphor layer contact is implanted on the back-plane. Its
response is compared to that of thick sensors of same design in terms of signal
and noise, detection efficiency and single point resolution based on data
collected with 300 GeV pions at the CERN SPS. We observe that the charge
collected and the signal-to-noise ratio scale according to the estimated
thickness of the sensitive volume and the efficiency and single point
resolution of the thinned chip are comparable to those measured for the thick
sensors.Comment: 8 pages, 3 figures, submitted to Nucl. Instr. and Meth., section
Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation
This paper presents the results of the characterisation of a back-illuminated
pixel sensor manufactured in Silicon-On-Insulator technology on a
high-resistivity substrate with soft X-rays. The sensor is thinned and a thin
Phosphor layer contact is implanted on the back-plane. The response to X-rays
from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL
Advanced Light Source.Comment: 9 pages, 5 figures, submitted to Nuclear Instruments and Methods
Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels
This paper presents the design and test results of a prototype monolithic
pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator
(SOI) CMOS technology. In the SOI technology, a thin layer of integrated
electronics is insulated from a (high-resistivity) silicon substrate by a
buried oxide. Vias etched through the oxide allow to contact the substrate from
the electronics layer, so that pixel implants can be created and a reverse bias
can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI
process, features both analog and digital pixels on a 10 micron pitch. Results
of tests performed with infrared laser and 1.35 GeV electrons and a first
assessment of the effect of ionising and non-ionising doses are discussed.Comment: 5 pages, 7 figures, submitted to Nuclear Instruments and Methods
Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
This paper presents the results of the characterisation of a pixel sensor
manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity
substrate, and featuring several pixel cell layouts for charge collection
optimisation. The sensor is tested with short IR laser pulses, X-rays and 200
GeV pions. We report results on charge collection, particle detection
efficiency and single point resolution.Comment: 15 pages, 11 figures, submitted to Nuclear Instruments and Methods
ANEM: A rotating composite target to produce an atmospheric-like neutron beam at the LNL SPES facility
A fast neutron (E> MeV) irradiation facility is under development at the 70 MeV SPES proton cyclotron at LNL (Legnaro, Italy) to investigate neutron-induced Single Event Effects (SEE) in microelectronic devices and systems. After an overview on neutron-induced SEE in electronics, we report on the progress in the design of ANEM (Atmospheric Neutron EMulator), a water-cooled rotating target made of Be and W to produce neutrons with an energy spectrum similar to that of neutrons produced by cosmic rays at sea-level. In ANEM, the protons from the cyclotron alternatively impinge on two circular sectors of Be and W of different areas; the effective neutron spectrum is a weighted combination of the spectra from the two sectors. In this contribution, we present the results of thermal-mechanical Finite Element Analysis (ANSYS) calculations of the performance of the ANEM prototype. The calculations at this stage indicate that ANEM can deliver fast neutrons with an atmospheric-like energy spectrum and with an integral flux [Formula: see text](1-70 MeV) [Formula: see text]107 n cm[Formula: see text]s[Formula: see text] that is 3Ă—109 more intense than the natural one at sea-level: a very competitive flux for SEE testing
Tracking and Vertexing with a Thin CMOS Pixel Beam Telescope
We present results of a study of charged particle track and vertex
reconstruction with a beam telescope made of four layers of 50 micron-thin CMOS
monolithic pixel sensors using the 120 GeV protons at the FNAL Meson Test Beam
Facility. We compare our results to the performance requirements of a future
e+e- linear collider in terms of particle track extrapolation and vertex
reconstruction accuracies.Comment: 9 pages, 7 figures submitted to Nuclear Instruments and Methods
Lithium ion-induced damage in silicon detectors
Silicon diodes processed by CNM on standard and oxygenated silicon substrates have been irradiated by 58 MeV lithium ions. The radiation-induced effects are very similar to the one observed after proton irradiation: substrate space charge sign inversion (SCSI), lower increase of the effective substrate doping concentration after SCSI for the oxygenated devices. The experimental radiation hardness factor has been determined to be 45.01, within 8.2% with the expected value. These results suggest that 58 MeV Li ions are a suitable radiation source for radiation hardness studies by ions heavier than protons for the future very high luminosity hadron colliders
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