Modeling the Subsurface Structure of Sunspots

While sunspots are easily observed at the solar surface, determining their subsurface structure is not trivial. There are two main hypotheses for the subsurface structure of sunspots: the monolithic model and the cluster model. Local helioseismology is the only means by which we can investigate subphotospheric structure. However, as current linear inversion techniques do not yet allow helioseismology to probe the internal structure with sufficient confidence to distinguish between the monolith and cluster models, the development of physically realistic sunspot models are a priority for helioseismologists. This is because they are not only important indicators of the variety of physical effects that may influence helioseismic inferences in active regions, but they also enable detailed assessments of the validity of helioseismic interpretations through numerical forward modeling. In this paper, we provide a critical review of the existing sunspot models and an overview of numerical methods employed to model wave propagation through model sunspots. We then carry out an helioseismic analysis of the sunspot in Active Region 9787 and address the serious inconsistencies uncovered by \citeauthor{gizonetal2009}~(\citeyear{gizonetal2009,gizonetal2009a}). We find that this sunspot is most probably associated with a shallow, positive wave-speed perturbation (unlike the traditional two-layer model) and that travel-time measurements are consistent with a horizontal outflow in the surrounding moat.Comment: 73 pages, 19 figures, accepted by Solar Physic

Sunspots: from small-scale inhomogeneities towards a global theory

The penumbra of a sunspot is a fascinating phenomenon featuring complex velocity and magnetic fields. It challenges both our understanding of radiative magneto-convection and our means to measure and derive the actual geometry of the magnetic and velocity fields. In this contribution we attempt to summarize the present state-of-the-art from an observational and a theoretical perspective.Comment: Accepted for publication in Space Science Review

InGaAsSb thermophotovoltaic diode physics evaluation

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively