High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

International audienceThin and thick fully relaxed In 0.65 Ga 0.35 As layers have been grown on InP substrates 0.81% misfit, with high structural and high optoelectronic quality at an operating wavelength of 2.0 m. Full relaxation is achieved, using the paramorphic approach, by growing the In 0.65 Ga 0.35 As layers lattice matched to an InAs 0.25 P 0.75 seed membrane of predetermined lattice parameter. The InAs 0.25 P 0.75 layer was originally grown pseudomorphically strained on the InP substrate before being separated and elastically relaxed using surface micromachining

Annealing effects on electrical and structural properties of Al2O3 films deposited by ALD

Al2O3 films have been grown by Atomic Layer Deposition (ALD) on (i) HF-stripped silicon substrate and (ii) thermally grown 0.5 nm SiO2 interfacial layer. After post-deposition annealing at various temperatures, bulk and interface properties of the films have been studied by x-ray diffraction, fourier transform infrared spectroscopy and high resolution transmission electron rnicroscopy. It was shown that the SiO2 layer beneath Al2O3 delays the crystallization of the film and improves the interface stability. While the crystallization of Al2O3 films on HF-last silicon is found to start after annealing at 800°C for 30 min and be completed for 850°C, 15 min, uncompleted crystallization is obsewed even after 1000°C, 15 min annealing for Al2O3 films with SiO2 buffer layer. Electrical measurements show a shift of C-V characteristics ta positive voltages and an increase of defect densities with the annealing temperature. Even after complete crystallization leakage current of films rernains at low level ( <10-8/cm2 at -3 V). The Al2O3 layers annealed at 800°C for 15 min exhibit neither crystallization nor electrical degradation showing good thermal stability of Al2O3 up ta this temperature

High quality Germanium On Insulator wafers with excellent hole mobility

International audienc

Growth of Si nano-crystals on alumina and integration in memory devices

International audienc

SOI-GeOI hybrid substrates elaboration by Ge condensation ,: process and electrical properties.

International audienc

Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas

International audienc

Ge-On-Insulator substrates formed by Ge condensation technique: fabrication, modeling and characterization.

International audienc

Ge-On-Insulator substrates formed by Ge condensation technique: fabrication, modeling and characterization.

International audienc