Strategies, methods and tools for managing nanorisks in construction

This paper presents a general overview of the work carried out by European project SCAFFOLD (GA 280535) during its 30 months of life, with special emphasis on risk management component. The research conducted by SCAFFOLD is focused on the European construction sector and considers 5 types of nanomaterials (TiO2, SiO2, carbon nanofibres, cellulose nanofibers and nanoclays), 6 construction applications (Depollutant mortars, selfcompacting concretes, coatings, self-cleaning coatings, fire resistant panels and insulation materials) and 26 exposure scenarios, including lab, pilot and industrial scales. The document focuses on the structure, content and operation modes of the Risk Management Toolkit developed by the project to facilitate the implementation of "nano-management" in construction companies. The tool deploys and integrated approach OHSAS 18001 - ISO 31000 and is currently being validated on 5 industrial case studies.Research carried out by project SCAFFOLD was made possible thanks to funding from the European Commission, through the Seventh Framework Programme (GA 280535

Annealing effects on electrical and structural properties of Al2O3 films deposited by ALD

Al2O3 films have been grown by Atomic Layer Deposition (ALD) on (i) HF-stripped silicon substrate and (ii) thermally grown 0.5 nm SiO2 interfacial layer. After post-deposition annealing at various temperatures, bulk and interface properties of the films have been studied by x-ray diffraction, fourier transform infrared spectroscopy and high resolution transmission electron rnicroscopy. It was shown that the SiO2 layer beneath Al2O3 delays the crystallization of the film and improves the interface stability. While the crystallization of Al2O3 films on HF-last silicon is found to start after annealing at 800°C for 30 min and be completed for 850°C, 15 min, uncompleted crystallization is obsewed even after 1000°C, 15 min annealing for Al2O3 films with SiO2 buffer layer. Electrical measurements show a shift of C-V characteristics ta positive voltages and an increase of defect densities with the annealing temperature. Even after complete crystallization leakage current of films rernains at low level ( <10-8/cm2 at -3 V). The Al2O3 layers annealed at 800°C for 15 min exhibit neither crystallization nor electrical degradation showing good thermal stability of Al2O3 up ta this temperature

Growth of Si nano-crystals on alumina and integration in memory devices

International audienc

Advanced pMOSFET on germanium-on-insulator : low temperature properties.

National audienc

Low-temperature characterization and modeling of advanced GeOI pMOSFETs : mobility mechanism and origin of the parasitic conduction

International audienc

Advanced pMOSFET on germanium-on-insulator : low temperature properties.

National audienc

Low-temperature measurements on Germanium-on-Insulator pMOSFETs: evaluation of the background doping level

International audienc