Long term Ultra-Violet Variability of Seyfert galaxies

Flux variability is one of the defining characteristics of Seyfert galaxies, a class of active galactic nuclei (AGN). Though these variations are observed over a wide range of wavelengths, results on their flux variability characteristics in the ultra-violet (UV) band are very limited. We present here the long term UV flux variability characteristics of a sample of fourteen Seyfert galaxies using data from the International Ultraviolet Explorer acquired between 1978 and 1995. We found that all the sources showed flux variations with no statistically significant difference in the amplitude of UV flux variation between shorter and longer wavelengths. Also, the flux variations between different near-UV (NUV, 1850 - 3300 A) and far-UV (FUV, 1150 - 2000 A) passbands in the rest frames of the objects are correlated with no time lag. The data show indications of (i) a mild negative correlation of UV variability with bolometric luminosity and (ii) weak positive correlation between UV variability and black hole mass. At FUV, about 50% of the sources show a strong correlation between spectral indices and flux variations with a hardening when brightening behaviour, while for the remaining sources the correlation is moderate. In NUV, the sources do show a harder when brighter trend, however, the correlation is either weak or moderate.Comment: Accepted by Journal of Astrophysics and Astronom

Long-Term Optical Flux and Colour Variability in Quasars

We have used optical V and R band observations from the Massive Compact Halo Object (MACHO) project on a sample of 59 quasars behind the Magellanic clouds to study their long term optical flux and colour variations. These quasars, lying in the redshift range of 0.2 < z < 2.8 and having apparent V band magnitudes between 16.6 and 20.1 mag, have observations ranging from 49 to 1353 epochs spanning over 7.5 yr with frequency of sampling between 2 to 10 days. All the quasars show variability during the observing period. The normalised excess variance (Fvar) in V and R bands are in the range 0.2% < FVvar < 1.6% and 0.1% < FRvar < 1.5% respectively. In a large fraction of the sources, Fvar is larger in the V band compared to the R band. From the z-transformed discrete cross-correlation function analysis, we find that there is no lag between the V and R band variations. Adopting the Markov Chain Monte Carlo (MCMC) approach, and properly taking into account the correlation between the errors in colours and magnitudes, it is found that the majority of sources show a bluer when brighter trend, while a minor fraction of quasars show the opposite behaviour. This is similar to the results obtained from another two independent algorithms, namely the weighted linear least squares fit (FITEXY) and the bivariate correlated errors and intrinsic scatter regression (BCES). However, the ordinary least squares (OLS) fit, normally used in the colour variability studies of quasars, indicates that all the quasars studied here show a bluer when brighter trend. It is therefore very clear that the OLS algorithm cannot be used for the study of colour variability in quasars

DLTS and in situ C–V analysis of trap parameters in swift 50 MeV Li3+ ion-irradiated Ni/SiO2/Si MOS capacitors

Ni/SiO2/Si MOS structures were fabricated on n-type Si wafers and were irradiated with 50 MeV Li3+ ions with fluences ranging from 1×1010 to 1×1012 ions/cm2. High frequency C–V characteristics are studied in situ to estimate the build-up of fixed and oxide charges. The nature of the charge build-up with ion fluence is analyzed. Defect levels in bulk Si and its properties such as activation energy, capture cross-section, trap concentration and carrier lifetimes are studied using deep-level transient spectroscopy. Electron traps with energies ranging from 0.069 to 0.523 eV are observed in Li ion-irradiated devices. The dependence of series resistance, substrate doping and accumulation capacitance on Li ion fluence are clearly explained. The study of dielectric properties (tan δ and quality factor) confirms the degradation of the oxide layer to a greater extent due to ion irradiation

Disorder, spin-orbit, and interaction effects in dilute Ga1−xMnxAs{\rm Ga}_{1-x}{\rm Mn}_x{\rm As}

We derive an effective Hamiltonian for ${\rm Ga}_{1-x}{\rm Mn}_x {\rm As}$ in the dilute limit, where ${\rm Ga}_{1-x}{\rm Mn}_x {\rm As}$ can be described in terms of spin $F=3/2$ polarons hopping between the {\rm Mn} sites and coupled to the local {\rm Mn} spins. We determine the parameters of our model from microscopic calculations using both a variational method and an exact diagonalization within the so-called spherical approximation. Our approach treats the extremely large Coulomb interaction in a non-perturbative way, and captures the effects of strong spin-orbit coupling and Mn positional disorder. We study the effective Hamiltonian in a mean field and variational calculation, including the effects of interactions between the holes at both zero and finite temperature. We study the resulting magnetic properties, such as the magnetization and spin disorder manifest in the generically non-collinear magnetic state. We find a well formed impurity band fairly well separated from the valence band up to $x_{\rm active} \lesssim 0.015$ for which finite size scaling studies of the participation ratios indicate a localization transition, even in the presence of strong on-site interactions, where $x_{\rm active}<x_{\rm nom}$ is the fraction of magnetically active Mn. We study the localization transition as a function of hole concentration, Mn positional disorder, and interaction strength between the holes.Comment: 15 pages, 12 figure

Microcontroller Based Three Phase Inverter

This paper presents the idea and design of a three-phase inverter that produces a symmetric AC output voltage of desired magnitude and frequency. Although the inverter has traditionally been designed as analog circuitry, now the digital inverters are preferred. Microcontroller used for generating the control signal for the three-phase inverter. The importance of the proper design of control signals with powerful switching is to reduce the harmonics and power losses of the inverter output voltage. The potential of the microcontroller to carry out the mathematical and logical functions allows it to imitate logic and electronics circuit. The PIC18FXX2 of Microchip is used for the implementation of inverter. PWM control is the most powerful technique that offers a simple method for controlling of analog systems with the processor’s digital output. All PWM generating methods aim at generating a sinusoidal inverter output voltage without low-order harmonics. With the availability of low cost high performance microchips characterized by the execution of most instructions in one instruction cycle, complicated control algorithms can be executed with fast speed, making very high sampling rate possible for digitally-controlled inverters. DOI: 10.17762/ijritcc2321-8169.150310

Multicritical crossovers near the dilute Bose gas quantum critical point

Many zero temperature transitions, involving the deviation in the value of a $U(1)$ conserved charge from a quantized value, are described by the dilute Bose gas quantum critical point. On such transitions, we study the consequences of perturbations which break the symmetry down to $Z_N$ in $d$ spatial dimensions. For the case $d=1$, $N=2$, we obtain exact, finite temperature, multicritical crossover functions by a mapping to an integrable lattice model.Comment: 10 pages, REVTEX 3.0, 2 EPS figure

Non-equilibrium Gross-Pitaevskii dynamics of boson lattice models

Motivated by recent experiments on trapped ultra-cold bosonic atoms in an optical lattice potential, we consider the non-equilibrium dynamic properties of such bosonic systems for a number of experimentally relevant situations. When the number of bosons per lattice site is large, there is a wide parameter regime where the effective boson interactions are strong, but the ground state remains a superfluid (and not a Mott insulator): we describe the conditions under which the dynamics in this regime can be described by a discrete Gross-Pitaevskii equation. We describe the evolution of the phase coherence after the system is initially prepared in a Mott insulating state, and then allowed to evolve after a sudden change in parameters places it in a regime with a superfluid ground state. We also consider initial conditions with a "pi phase" imprint on a superfluid ground state (i.e. the initial phases of neighboring wells differ by pi), and discuss the subsequent appearance of density wave order and "Schrodinger cat" states.Comment: 16 pages, 11 figures; (v2) added reference

Dynamics and Transport in Random Antiferromagnetic Spin Chains

We present the first results on the low-frequency dynamical and transport properties of random antiferromagnetic spin chains at low temperature ($T$). We obtain the momentum and frequency dependent dynamic structure factor in the Random Singlet (RS) phases of both spin-1/2 and spin-1 chains, as well as in the Random Dimer phase of spin-1/2 chains. We also show that the RS phases are unusual `spin-metals' with divergent low-frequency conductivity at T=0, and follow the spin conductivity through `metal-insulator' transitions tuned by the strength of dimerization or Ising anisotropy in the spin-1/2 case, and by the strength of disorder in the spin-1 case.Comment: 4 pages (two-column format). Presentation substantially revised to accomodate new result