Memristors: a short review on fundamentals, structures, materials and applications

The paper contains a short literature review on the subject of special type of thin film structures with resistive-switching memory effect. In the literature, such structures are commonly labeled as "memristors". The word "memristor" originates from two words: "memory" and "resistor". For the first time, the memristor was theoretically described in 1971 by Leon Chua as the 4th fundamental passive electronics element with a non-linear current-voltage behavior. The reported area of potential usage of memristor is enormous. It is predicted that the memristor could find application, for example in the domain of nonvolatile random access memory, flash memory, neuromorphic systems and so forth. However, in spite of the fact that plenty of papers have been published in the subject literature to date, the memristor still behaves as a "mysterious" electronic element. It seems that, one of the important reasons that such structures are not yet in practical use, is unsufficient knowledge of physical phenomena determining occurrence of the switching effect. The present paper contains a literature review of available descriptions of theoretical basis of the memristor structures, used materials, structure configurations and discussion about future prospects and limitations

Comparison of the physicochemical properties of TiO2 thin films obtained by magnetron sputtering with continuous and pulsed gas flow

In this paper, a comparison of TiO2 thin films prepared by magnetron sputtering with a continuous and pulsed gas flow was presented. Structural, surface, optical, and mechanical properties of deposited titanium dioxide coatings were analyzed with the use of a wide range of measurement techniques. It was found that thin films deposited with a gas impulse had a nanocrystalline rutile structure instead of fibrous-like anatase obtained with a continuous gas flow. TiO2 thin films deposited with both techniques were transparent in the visible wavelength range, however, a much higher refractive index and packing density were observed for coatings deposited by the pulsed gas technique. The application of a gas impulse improved the hardness and scratch resistance of the prepared TiO2 thin films

Influence of Annealing on Gas-Sensing Properties of TiOx Coatings Prepared by Gas Impulse Magnetron Sputtering with Various O2 Content

TiOx films were prepared by gas impulse magnetron sputtering under oxygen-deficient (ODC) and oxygen-rich conditions (ORC) and annealing at 100–800 °C was used. The O2 content had an effect on their transparency level (Tλ). The films from the ORC mode had ca. Tλ = 60%, which decreased slightly in the VIS range after annealing. The film from the ODC mode had lower transmission (ca. <10%), which increased in the NIR range after annealing by up to ca. 60%. Differences in optical band gap (Egopt) and Urbach energy (Eu) were also observed. The deposition parameters had an influence on the microstructure of TiOx coatings. The ORC and ODC modes resulted in columnar and grainy structures, respectively. Directly after deposition, both coatings were amorphous according to the GIXRD results. In the case of TiOxORC films, this state was retained even after annealing, while for TiOxODC, the crystalline forms of Ti and TiO2-anatase were revealed with increasing temperature. Sensor studies have shown that the response to H2 in the coating deposited under oxygen-rich conditions was characteristic of n-type conductivity, while oxygen-deficient conditions led to a p-type response. The highest sensor responses were achieved for TiOxODC annealed at 300 °C and 400 °C

Influence of annealing temperature on sensing properties of TIOx thin films prepared by magnetron sputtering

This work describes the influence of the annealing temperature on the optical and surfaceproperties of non-stoichiometric titanium oxide (TiOx) thin films. The results were related to theinvestigation of the sensing response toward H2 gas. The samples were prepared by the magnetronsputtering method using Ar:O2 plasma with low oxygen content (20% and 30%). An increase in theamount of oxygen in the gas mixture supplied to the magnetron led to a decrease in the deposition rate.The thickness of the deposited thin films, determined by the use of an optical profiler, was found tobe 600 nm and 200 nm, respectively. The coatings were then annealed in an ambient air atmosphereat a temperature in the range from 100C to 800C. Additionally, the roughness of the coating surfacewas measured. To investigate the optical properties of the thin films, transmission and reflection spectrawere measured, and parameters such as transmission coefficient, cutoff wavelength value, and opticalband gap value were determined as functions of the annealing temperature. The sensing propertiesof the thin films were characterised on the basis of changes in a resistance value as a response to amix of Ar:3.5% H2. It was found that the oxidation of the thin films has a key influence not only onthe response time of the TiOx thin films, but also on the character of the response.Keywords: materials engineering, titanium oxides, thin films, magnetron sputtering, optical properties,gas sensing propertie

Correlation of Photocatalysis and Photoluminescence Effect in Relation to the Surface Properties of TiO2:Tb Thin Films

In this paper structural, optical, photoluminescence, and photocatalytic properties of TiO2 and TiO2:(2.6 at. % Tb) thin films have been compared. Thin films were prepared by high-energy reactive magnetron sputtering process, which enables obtaining highly nanocrystalline rutile structure of deposited films. Crystallites sizes were 8.7 nm and 6.6 nm for TiO2 and TiO2:Tb, respectively. Surface of prepared thin films was homogenous with small roughness of ca. 7.2 and 2.1 nm in case of TiO2 and TiO2:Tb samples, respectively. Optical properties measurements have shown that the incorporation of Tb into TiO2 matrix has not changed significantly the thin films transparency. It also enables obtaining photoluminescence effect in wide range from 350 to 800 nm, what is unique phenomenon in case of TiO2 with rutile structure. Moreover, it has been found that the incorporation of 2.6 at. % of Tb has increased the photocatalytic activity more than two times as compared to undoped TiO2. Additionally, for the first time in the current state of the art, the relationship between photoluminescence effect, photocatalytic activity, and surface properties of TiO2:Tb thin films has been theoretically explained

Complex Research on Amorphous Vanadium Oxide Thin Films Deposited by Gas Impulse Magnetron Sputtering

In this work, a complex examination of vanadium oxide thin films prepared by gas impulse magnetron sputtering with various Ar:O2 gas ratios of 2:1 ÷ 8:1 was conducted. X-ray diffraction revealed the amorphous nature of the prepared thin films, and scanning electron microscopy images showed that the thin films were crack-free and homogenous. Optical properties investigations revealed that a higher oxygen content in the Ar:O2 atmosphere during sputtering caused an increase in transparency. The sample prepared with the highest amount of oxygen in the gas mixture during deposition had 51.1% of the average transmission in the visible wavelength range. A decrease in oxygen caused deterioration in the thin film transparency with the lowest value equal to 21.8%. Electrical measurements showed that the prepared thin films had a semiconducting character with either electron or hole conduction type, depending on the sputtering gas composition. A small amount of oxygen in the gas mixture resulted in the deposition of p-type thin films, whereas an increase in the amount of oxygen caused a change to n-type electrical conduction. Resistivity decreased with increasing Ar:O2 ratio. The gas sensing response toward diluted hydrogen was investigated for all the VxOy thin films, but at low operating temperatures, only the p-type thin films exhibited a visible response

Improved Methodology of Cross-Sectional SEM Analysis of Thin-Film Multilayers Prepared by Magnetron Sputtering

In this work, an improved methodology of cross-sectional scanning electron microscopy (SEM) analysis of thin-film Ti/V/Ti multilayers was described. Multilayers with various thicknesses of the vanadium middle layer were prepared by magnetron sputtering. The differences in cross sections made by standard fracture, focused ion beam (FIB)/Ga, and plasma focused ion beam (PFIB)/Xe have been compared. For microscopic characterization, the Helios NanoLab 600i microscope and the Helios G4 CXe with the Quanta XFlash 630 energy dispersive spectroscopy detector from Bruker were used. The innovative multi-threaded approach to the SEM preparation itself, which allows us to retain information about the actual microstructure and ensure high material contrast even for elements with similar atomic numbers was proposed. The fracture technique was the most noninvasive for microstructure, whereas FIB/PFIB results in better material contrast (even than EDS). There were only subtle differences in cross sections made by FIB-Ga and PFIB-Xe, but the decrease in local amorphization or slightly better contrast was in favor of Xe plasma. It was found that reliable information about the properties of modern nanomaterials, especially multilayers, can be obtained by analyzing a two-part SEM image, where the first one is a fracture, while the second is a PFIB cross section