11 research outputs found

    Worst-case MOSFET parameter extraction for a 2μm CMOS process

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    This paper will describe the process by which realistic nominal and worstcase DC MOSFFT model parameter sets were determined and validated for a 2μm CMOS technology. The steps involved in this task, which will be detailed, ranged from the definition of a suitable circuit simulator model. through the collection of statistical parametric data, to the generation and verification of the worstcase model sets obtained from this data

    Worst-case MOSFET parameter extraction for a 2 /spl mu/m CMOS process

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    This paper will describe the process by which realistic nominal and worst-case DC MOSFET model parameter sets were determined and validated for a 2 /spl mu/m CMOS technology. The steps involved in this task, which will be detailed, ranged from the definition of a suitable circuit simulator model, through the collection of statistical parametric data, to the generation and verification of the worst-case model sets obtained from this data

    Hemangioblastoma of the Central Nervous System

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