Charge carrier injection and trapping in the buried oxides of SOI structures

The electron injection processes in the silicon-on-insulator (SOI) devices affect strongly the reliability of device operation [1]. Usually the buried oxide (BOX)/silicon film interface shows worse structural and electrical properties than that of the gate oxide/silicon film interface [2]. This leads to enhanced charge trapping and degradation of the BOX during SOI device operation. Therefore, the promising perspectives of SOI devices for some applications (especially for high-voltage and high-temperature devices) are often limited by carrier injection processes in the BOX