TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

Small-pitch 3D pixel sensors have been developed to equip the innermost layers of the ATLAS and CMS tracker upgrades at the High Luminosity LHC. They feature 50 × 50 and 25 × 100 μm2 geometries and are fabricated on p-type Si-Si Direct Wafer Bonded substrates of 150 μm active thickness with a single-sided process. Due to the short inter-electrode distance, charge trapping effects are strongly mitigated, making these sensors extremely radiation hard. Results from beam test measurements of 3D pixel modules irradiated at large fluences (1016neq/cm2) indeed demonstrated high efficiency at maximum bias voltages of the order of 150 V. However, the downscaled sensor structure also lends itself to high electric fields as the bias voltage is increased, meaning that premature electrical breakdown due to impact ionization is a concern. In this study, TCAD simulations incorporating advanced surface and bulk damage models are used to investigate the leakage current and breakdown behavior of these sensors. Simulations are compared with measured characteristics of 3D diodes irradiated with neutrons at fluences up to 1.5 × 1016neq/cm2. The dependence of the breakdown voltage on geometrical parameters (e.g., the n+ column radius and the gap between the n+ column tip and the highly doped p++ handle wafer) is also discussed for optimization purposes

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2 10^16 1 MeV equivalent n/cm^2) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.Comment: 8 pages, 14 figures. arXiv admin note: text overlap with arXiv:1611.1013

Development of Silicon PhotoMultipliers at FBK-irst

We report on the development of Silicon PhotoMultipliers (SiPM) at the Fondazione Bruno Kessler (FBK)-irst (Trento, Italy) in the framework of a collaboration with INFN. Device geometry and technology are resumed, and selected results from the characterization of SiPM prototypes from three production batches are reported, including static, dynamic, and noise properties, as well as photodetection efficiency

Development of a new generation of 3D pixel sensors for HL-LHC

This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades. (C) 2015 Elsevier B.V. All rights reserved

Optimization of a multi-ring detector for Ps time of flight measurements

We have designed a multi-ring detector (MRD) based on Bismuth Germanate (BGO) crystals, coupled to Silicon PhotoMultipliers (SiPM) for measuring the Ps time of flight (TOF). The set-up geometry was optimized by Monte Carlo simulations to take into account at different Ps velocities: (i) the background noise due to backscattered positrons, (ii) the crosstalk between adjacent detectors, (iii) the lifetime of Ps decay. Three parameters were defined to evaluate the different configurations and a figure of merit was obtained. This allows the choice of the best set up configuration for measuring Ps emitted with a particular energy range, optimizing the signal to noise ratio and keeping the acquisition time acceptable

10 ps timing with highly irradiated 3D trench silicon pixel sensors

In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of $2.5 \cdot 10^{16}\,1\,MeV\, n_{eq}\,cm^{-2}$. This feature and a detection efficiency close to $99\%$ make this sensors one of the best candidates for 4D tracking detectors in High-Energy-Physics experiments.Comment: Prepared for submission to JINST, IWORID 202

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.Comment: Preprint submitted to Nuclear Instruments and Methods A, 11 pages, 13 fig

Semiconductor pixel detectors for digital mammography

Abstract We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown

Detectors for the next-generation PET scanners

Next-generation PET scanners are expected to fulfill very high requirements in terms of spatial, energy and timing resolution. Modern scanner performances are inherently limited by the use of standard photomultiplier tubes. The use of Silicon Photomultiplier (SiPM) matrices is proposed for the construction of a small animal PET system with depth of interaction capabilities. Measurements showing that SiPM matrices are highly ideal for PET applications, have been reported