9 research outputs found

    Investigation of the Jahn-Teller Transition in TiF3 using Density Functional Theory

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    We use first principles density functional theory to calculate electronic and magnetic properties of TiF3 using the full potential linearized augmented plane wave method. The LDA approximation predicts a fully saturated ferromagnetic metal and finds degenerate energy minima for high and low symmetry structures. The experimentally observed Jahn-Teller phase transition at Tc=370K can not be driven by the electron-phonon interaction alone, which is usually described accurately by LDA. Electron correlations beyond LDA are essential to lift the degeneracy of the singly occupied Ti t2g orbital. Although the on-site Coulomb correlations are important, the direction of the t2g-level splitting is determined by the dipole-dipole interactions. The LDA+U functional predicts an aniferromagnetic insulator with an orbitally ordered ground state. The input parameters U=8.1 eV and J=0.9 eV for the Ti 3d orbital were found by varying the total charge on the TiF62_6^{2-} ion using the molecular NRLMOL code. We estimate the Heisenberg exchange constant for spin-1/2 on a cubic lattice to be approximately 24 K. The symmetry lowering energy in LDA+U is about 900 K per TiF3 formula unit.Comment: 7 pages, 9 figures, to appear in Phys. Rev.

    Electronic excitation energies in TiO 2 in the fluorite phase

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    The ab initio pseudopotential method within the generalized gradient approximation (GGA) and quasiparticle approximation has been used to investigate the electronic properties of titanium dioxide in the rutile, anatase, and fluorite structures, respectively. Here we present the GW approximation for the electronic self-energy, which allows to calculate excited-state properties, especially electronic band structures. For this calculation, good agreement with the experimental results for the minimum band gaps in rutile and anatase phase is obtained. In the fluorite phase we predict that titanium dioxide will be an indirect (Γ to X) wide band-gap semiconductor (2.367 or 2.369 eV) and the properties remain to be confirmed by experiment. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010

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