24 research outputs found
Si1-xGex critical thickness for surface wave generation during UHV-CVD growth at 525\ub0C
No full textSeveral Si1-xGex/Si heterostructures were grown at 525\ub0C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3.Peer reviewed: YesNRC publication: Ye
On the strain rate dependence of ductility troughs observed under liquid metal embrittlement and creep conditions
No full textExperimental study of Bi–Cd–In phase diagram using conventional methods plus quenching and ‘solidification path’ techniques
No full textStudy of threading dislocations in the plan-view sample of SiGe/Si(001) superlattices by transmission electron microscopy
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Visible and Near-Infrared Photothermal Catalyzed Hydrogenation of Gaseous CO2 over Nanostructured Pd@Nb2O5
No full text10.1002/advs.201600189Advanced Science310160018
A comparison of the critical thickness for MBE grown Lt-GaAs determined by In-Situ ellipsometry and transmission electron microscopy
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