1,289 research outputs found
The Yangian symmetry of the Hubbard Model
We discovered new hidden symmetry of the one-dimensional Hubbard model. We
showthat the one-dimensional Hubbard model on the infinite chain has the
infinite-dimensional algebra of symmetries. This algebra is a direct sum of two
-Yangians. This symmetry is an extension
of the well-known . The deformation parameters of the
Yangians are equal up to the signs to the coupling constant of the Hubbard
model hamiltonian.Comment: 7 pages, ITP-SB-93-6
Molecular ordering of precursor films during spreading of tiny liquid droplets
In this work we address a novel feature of spreading dynamics of tiny liquid
droplets on solid surfaces, namely the case where the ends of the molecules
feel different interactions to the surface. We consider a simple model of
dimers and short chain--like molecules which cannot form chemical bonds with
the surface. We study the spreading dynamics by Molecular Dynamics techniques.
In particular, we examine the microscopic structure of the time--dependent
precursor film and find that in some cases it can exhibit a high degree of
local order. This order persists even for flexible chains. Our results suggest
the possibility of extracting information about molecular interactions from the
structure of the precursor film.Comment: 4 pages, revtex, no figures, complete file available from
ftp://rock.helsinki.fi/pub/preprints/tft/ or at
http://www.physics.helsinki.fi/tft/tft_preprints.html (to appear in Phys.
Rev. E Rapid Comm.
Molecular dynamics simulations of oxide memristors: thermal effects
We have extended our recent molecular-dynamic simulations of memristors to
include the effect of thermal inhomogeneities on mobile ionic species appearing
during operation of the device. Simulations show a competition between an
attractive short-ranged interaction between oxygen vacancies and an enhanced
local temperature in creating/destroying the conducting oxygen channels. Such a
competition would strongly affect the performance of the memristive devices.Comment: submit/0169777; 6 pages, 4 figure
Chiral Baryon Fields in the QCD Sum Rule
We study the structure of local baryon fields using the method of QCD sum
rule. We only consider the single baryon fields and calculate their operator
product expansions. We find that the octet baryon fields belonging to the
chiral representations [(3,3*)+(3*,3)] and [(8,1)+(1,8)] and the decuplet
baryon fields belonging to the chiral representations [(3,6)+(6,3)] lead to the
baryon masses which are consistent with the experimental data of ground baryon
masses. We also calculate their decay constants, check our normalizations for
baryon fields in PRD81:054002(2010) and find that they are well-defined.Comment: 12 pages, 6 figure, 1 table, accepted by EPJ
Chaotic memristor
We suggest and experimentally demonstrate a chaotic memory resistor
(memristor). The core of our approach is to use a resistive system whose
equations of motion for its internal state variables are similar to those
describing a particle in a multi-well potential. Using a memristor emulator,
the chaotic memristor is realized and its chaotic properties are measured. A
Poincar\'{e} plot showing chaos is presented for a simple nonautonomous circuit
involving only a voltage source directly connected in series to a memristor and
a standard resistor. We also explore theoretically some details of this system,
plotting the attractor and calculating Lyapunov exponents. The multi-well
potential used resembles that of many nanoscale memristive devices, suggesting
the possibility of chaotic dynamics in other existing memristive systems.Comment: Applied Physics A (in press
On the ground state energy scaling in quasi-rung-dimerized spin ladders
On the basis of periodic boundary conditions we study perturbatively a large
N asymptotics (N is the number of rungs) for the ground state energy density
and gas parameter of a spin ladder with slightly destroyed rung-dimerization.
Exactly rung-dimerized spin ladder is treated as the reference model. Explicit
perturbative formulas are obtained for three special classes of spin ladders.Comment: 4 page
Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in LuIrSi and ErIrSi
We have studied the charge-density-wave (CDW) state for the superconducting
LuIrSi and the antiferromagnetic ErIrSi as
variables of temperature, magnetic field, and hydrostatic pressure. For
LuIrSi, the application of pressure strongly suppresses the CDW
phase but weakly enhances the superconducting phase. For ErIrSi,
the incommensurate CDW state is pressure independent and the commensurate CDW
state strongly depends on the pressure, whereas the antiferromagnetic ordering
is slightly depressed by applying pressure. In addition, ErIrSi
shows negative magnetoresistance at low temperatures, compared with the
positive magnetoresistance of LuIrSi.Comment: 12 pages, including 6 figure
Proton strangeness form factors in (4,1) clustering configurations
We reexamine a recent result within a nonrelativistic constituent quark model
(NRCQM) which maintains that the uuds\bar s component in the proton has its
uuds subsystem in P state, with its \bar s in S state (configuration I). When
the result are corrected, contrary to the previous result, we find that all the
empirical signs of the form factors data can be described by the lowest-lying
uuds\bar s configuration with \bar s in P state that has its uuds subsystem in
state (configuration II). Further, it is also found that the removal of the
center-of-mass (CM) motion of the clusters will enhance the contributions of
the transition current considerably. We also show that a reasonable description
of the existing form factors data can be obtained with a very small probability
P_{s\bar s}=0.025% for the uuds\bar s component. We further see that the
agreement of our prediction with the data for G_A^s at low-q^2 region can be
markedly improved by a small admixture of configuration I. It is also found
that by not removing CM motion, P_{s\bar s} would be overestimated by about a
factor of four in the case when transition dominates over direct currents.
Then, we also study the consequence of a recent estimate reached from analyzing
the existing data on quark distributions that P_{s\bar s} lies between 2.4-2.9%
which would lead to a large size for the five-quark (5q) system, as well as a
small bump in both G^s_E+\eta G^s_M and G^s_E in the region of q^2 =< 0.1
GeV^2.Comment: Prepared for The Fifth Asia-Pacific Conference on Few-Body Problems
in Physics 2011 in Seoul, South Korea, 22-26 August 201
Edge reconstructions in fractional quantum Hall systems
Two dimensional electron systems exhibiting the fractional quantum Hall
effects are characterized by a quantized Hall conductance and a dissipationless
bulk. The transport in these systems occurs only at the edges where gapless
excitations are present. We present a {\it microscopic} calculation of the edge
states in the fractional quantum Hall systems at various filling factors using
the extended Hamiltonian theory of the fractional quantum Hall effect. We find
that at the quantum Hall edge undergoes a reconstruction as the
background potential softens, whereas quantum Hall edges at higher filling
factors, such as , are robust against reconstruction. We present
the results for the dependence of the edge states on various system parameters
such as temperature, functional form and range of electron-electron
interactions, and the confining potential. Our results have implications for
the tunneling experiments into the edge of a fractional quantum Hall system.Comment: 11 pages, 9 figures; minor typos corrected; added 2 reference
A dc voltage step-up transformer based on a bi-layer \nu=1 quantum Hall system
A bilayer electron system in a strong magnetic field at low temperatures,
with total Landau level filling factor nu =1, can enter a strongly coupled
phase, known as the (111) phase or the quantum Hall pseudospin-ferromagnet. In
this phase there is a large quantized Hall drag resistivity between the layers.
We consider here structures where regions of (111) phase are separated by
regions in which one of the layers is depleted by means of a gate, and various
of the regions are connected together by wired contacts. We note that with
suitable designs, one can create a DC step-up transformer where the output
voltage is larger than the input, and we show how to analyze the current flows
and voltages in such devices
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