4 research outputs found
Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field
Within the framework of the effective-mass approximation, using a
variational method, we have calculated the effect of intense laser radiation
on the binding energy of the shallow-donor impurities in a Ga1-xInxNyAs1-y/GaAs single quantum well for different nitrogen and indium
mole concentrations. Our numerical results show that the binding energy
strongly depends on the laser intensity and frequency (via the laser
dressing parameter) and it also depends on the nitrogen and indium
concentrations. Impurity binding energy under intense laser fields can be
tuned by changing the nitrogen and indium mole fraction
The genetic and ecophysiological diversity of Microcystis
Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/171576/1/emi15615.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/171576/2/emi15615-sup-0002-FigureS1.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/171576/3/emi15615_am.pd