An Inductor-less 13.5-Gbps 8-mW Analog Equalizer for Multi-Channel Multi-Frequency Operation

A low-power analog equalizer has been realized in 45nmCMOS technology. Active feedback is employed to avoidinductors and save chip area. Peaking frequency and gain boostcan be finely controlled from 4GHz to 7GHz and from 0dB to24dB to allow multi-channel multi-frequency operation. Thecircuit dissipates 8mW from a 1.1V supply and it occupies0.009mm2. The measured maximum peak-to-peak jitter was 29psfor a 13.5Gb/s data transmission over a 18dB-loss backplane

A 0.13/spl mu/m CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier.

This paper presents a fully-integrated CMOS front-end based on a direct conversion architecture for UMTS/802.11b-g and a low-IF at 100kHz for DCS 1800. The two key building blocks are a multi-band low noise amplifier that uses positive feedback to improve its gain and a highly linear mixer. The front-end, integrated in 0.13μm CMOS process, exhibits a minimum noise figure of 5.2dB, a programmable gain that can be varied from 13.5dB to 28.5dB, an IIP3 of more than -7.5dBm and an IIP2 better than 50dBm. The total current consumption is 20mA from a 1.2 V supply

Oxide Breakdown After RF Stress: Experimental Analysis and Effects on Power Amplifier Operation

The target in the design of CMOS radio-frequency (RF) transceivers for wireless application is the highest integration level, despite reliability issues of conventional submicron MOSFETs, due to high RF voltage and current peaks. In this scenario, this paper investigates gate-oxide breakdown under RF stress by using a class-E power amplifier (PA) for experiments. We showed that maximum RF voltage peaks for safe device operation are much larger than usual DC limits, and that the physical mechanism of oxide degradation is triggered by the rms value of oxide field, and not by its maximum, as generally believed. This finding has a strong impact on RF circuit designs, especially in MOSFET scaling perspectives. Finally, breakdown effects on PA operations are discussed