477 research outputs found

    Crystal Growth in Fluid Flow: Nonlinear Response Effects

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    We investigate crystal-growth kinetics in the presence of strong shear flow in the liquid, using molecular-dynamics simulations of a binary-alloy model. Close to the equilibrium melting point, shear flow always suppresses the growth of the crystal-liquid interface. For lower temperatures, we find that the growth velocity of the crystal depends non-monotonically on the shear rate. Slow enough flow enhances the crystal growth, due to an increased particle mobility in the liquid. Stronger flow causes a growth regime that is nearly temperature-independent, in striking contrast to what one expects from the thermodynamic and equilibrium kinetic properties of the system, which both depend strongly on temperature. We rationalize these effects of flow on crystal growth as resulting from the nonlinear response of the fluid to strong shearing forces.Comment: to appear in Phys. Rev. Material

    Microstructure and Phase Formation in a Rapidly Solidified Laser-Deposited Ni-Cr-B-Si-C Hardfacing Alloy

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    In this study, microstructural evolutions and phase selection phenomena during laser deposition of a hardfacing Ni-Cr-B-Si-C alloy at different processing conditions are experimentally investigated. The results show that even minor variations in the thermal conditions during solidification can modify the type and morphology of the phases. Higher undercoolings obtained at faster cooling rates suppressed the primary borides and encouraged floret-shape mixtures of Ni and Cr5B3 via a metastable reaction. Variations in the boride phases are discussed in terms of nucleation-and growth-controlled phase selection mechanisms. These selection processes also influenced the nature and proportion of the Ni-B-Si eutectics by changing the amount of the boron available for the final eutectic reactions. The results of this work emphasize the importance of controlling the cooling rate during deposition of these industrially important alloys using laser beam or other rapid solidification techniques. (C) The Minerals, Metals & Materials Society and ASM International 201

    Superconducting properties and Fermi-surface topology of the quasi-two-dimensional organic superconductor λ\lambda-(BETS)2_{2}GaCl4_{4}

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    The Fermi surface topology of the organic superconductor \lbets has been determined using the Shubnikov-de Haas and magnetic breakdown effects and angle-dependent magnetoresistance oscillations. The former experiments were carried out in pulsed fields of up to 60 T, whereas the latter employed quasistatic fields of up to 30 T. All of these data show that the Fermi-surface topology of \lbets is very similar to that of the most heavily-studied organic superconductor, \cuscn, except in one important respect; the interplane transfer integral in \lbets is a factor 10\sim 10 larger than that in \cuscn . The increased three-dimensionality of \lbets is manifested in radiofrequency penetration-depth measurements, which show a clear dimensional crossover in the behaviour of Hc2(T)H_{c2}(T). The radiofrequency measurements have also been used to extract the Labusch parameter determining the fluxoid interactions as a function of temperature, and to map the flux-lattice melting curve.Comment: 24 pages 10 figure

    Magnetotransport in a pseudomorphic GaAs/GaInAs/GaAlAs heterostructure with a Si delta-doping layer

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    Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si delta-layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n_e=1.67x 10^16 m^-2. By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.8In0.2As QW can become populated as well as the Si delta-layer. The presence of electrons in the delta-layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as: 1) magnetic freeze-out of carriers in the delta-layer when a low density of electrons is present in the delta-layer, and 2) quantization of the electron motion in the two dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta-layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain a satisfactory agreement between model and experiment.Comment: 23 pages, RevTex, 11 Postscript figures (accepted for Phys. Rev. B
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