New negative differential resistance device based on resonant interband tunneling

We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure

Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures

We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×10^5 A/cm^2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers

Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures

We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region

Reflection high-energy electron diffraction studies of the growth of lnAs/Ga_(1-x)In_xSb strained-layer superlattices

We have used reflection high‐energy electron diffraction to study the surface periodicity of the growth front of InAs/GaInSb strained‐layer superlattices (SLSs). We found that the apparent surface lattice spacing reproducibly changed during layers which subsequent x‐ray measurements indicated were coherently strained. Abrupt changes in the measured streak spacings were found to be correlated to changes in the growth flux. The profile of the dynamic streak spacing was found to be reproducible when comparing consecutive periods of a SLSs or different SLSs employing the same shuttering scheme at the InAs/GaInSb interface. Finally, when the interface shuttering scheme was changed, it was found that the dynamic streak separation profile also changed. Large changes in the shuttering scheme led to dramatic differences in the streak separation profile, and small changes in the shuttering scheme led to minor changes in the profile. In both cases, the differences in the surface periodicity profile occurred during the parts of the growth where the incident fluxes differed

Type II superlattices for infrared detectors and devices

Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds. Specifically, it has been demonstrated that both InSb/InAsxSb1-x superlattices and Ga1-xInxSb/InAs superlattices can possess energy gaps in the 8-14 mu m range. The efforts have focused on the Ga1-xInxSb/InAs system because of its extreme broken gap band alignment, which results in narrow energy gaps for very short superlattice periods. The authors report the use of in situ chemical doping of Ga1-xInxSb/InAs superlattices to fabricate p-n photodiodes. These diodes display a clear photovoltaic response with a threshold near 12 mu m. They have also attained outstanding structural quality in Ga1-xInxSb/InAs superlattices grown on radiatively heated GaSb substrates. Cross-sectional transmission electron microscope images of these superlattices display no dislocations, while high resolution X-ray diffraction scans reveal sharp high-order superlattice satellites and strong Pendellosung fringes

Stability analysis of the Witten black hole (cigar soliton) under world-sheet RG flow

We analyze the stability of the Euclidean Witten black hole (the cigar soliton in mathematics literature) under first-order RG (Ricci) flow of the world-sheet sigma model. This analysis is from the target space point of view. We find that the Witten black hole has no unstable normalizable perturbative modes in a linearized mode analysis in which we consider circularly symmetric perturbations. Finally, we discuss a result from mathematics that implies the existence of a non-normalizable mode of the Witten black hole under which the geometry flows to the sausage solution studied by Fateev, Onofri and Zamolodchikov.Comment: 17 pages, version to appear in Physical Review D, and now has complete proof of stability for circularly symmetric perturbations, in response to referee comment

Low frequency creep in CoNiFe films

The results of an investigation of domain wall motion excited by slow rise-time, bipolar, hard-axis pulses in vacuum deposited CoNiFe films 1500A to 2000A thick are presented. The results are consistent with those of comparable NiFe films in spite of large differences in film properties. The present low frequency creep data together with previously published results in this and other laboratories can be accounted for by a model which requires that the wall structure change usually associated with low frequency creep be predominately a gyromagnetic process. The correctness of this model is reinforced by the observation that the wall coercive force, the planar wall mobility, and the occurrence of an abrupt wall structure change are the only properties closely correlated to the creep displacement characteristics of a planar wall in low dispersion films

Single-charge rotating black holes in four-dimensional gauged supergravity

We consider four-dimensional U(1)^4 gauged supergravity, and obtain asymptotically AdS_4, non-extremal, charged, rotating black holes with one non-zero U(1) charge. The thermodynamic quantities are computed. We obtain a generalization that includes a NUT parameter. The general solution has a discrete symmetry involving inversion of the rotation parameter, and has a string frame metric that admits a rank-2 Killing-Stackel tensor.Comment: 9 page

Extremal Black Hole/CFT Correspondence in (Gauged) Supergravities

We extend the investigation of the recently proposed Kerr/CFT correspondence to large classes of rotating black hole solutions in gauged and ungauged supergravities. The correspondence, proposed originally for four-dimensional Kerr black holes, asserts that the quantum states in the near-horizon region of an extremal rotating black hole are holographically dual to a two-dimensional chiral theory whose Virasoro algebra arises as an asymptotic symmetry of the near-horizon geometry. In fact in dimension D there are [(D-1)/2] commuting Virasoro algebras. We consider a general canonical class of near-horizon geometries in arbitrary dimension D, and show that in any such metric, the [(D-1)/2] central charges each imply, via the Cardy formula, a microscopic entropy that agrees with the Bekenstein-Hawking entropy of the associated extremal black hole. In the remainder of the paper we show for most of the known rotating black hole solutions of gauged supergravity, and for the ungauged supergravity solutions with four charges in D=4 and three charges in D=5, that their extremal near-horizon geometries indeed lie within the canonical form. This establishes that in all these examples, the microscopic entropies of the dual CFTs agree with the Bekenstein-Hawking entropies of the extremal rotating black holes.Comment: 32 pages, references added and minor typos fixe