Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx precipitates were formed, was studied by means of various X-ray diffraction methods. Considerable increments of integral reflectivities for different Bragg reflections of such samples in comparison with those calculated for a perfect crystal were detected. Broadening of the spatial intensity distribution curves for the Bragg-diffracted beams taken by a single crystal spectrometer as well as the maps of the diffuse isointensity distribution near a reciprocal lattice point, registered by the Philips high-resolution diffractometer, are shown. All of these diffraction effects related to creation of the SiOx precipitates formed on structural damages caused by implantation of oxygen or neon ions and subsequent annealing. Contrary to FZSi, where the appearence of SiOx precipitates was discovered due to intensive diffuse scattering near the layer contained the implanted oxygen ions only, in the case of CZSi samples with larger concentration of oxygen (up to 1*10¹⁸ at/cm³) such defects were formed not only near the burried layer, created by ions of oxygen or neon (with energy E = 4 MeV, dose 10¹⁴cm⁻²) but in a bulk of a crystal. Annealing of the FZSi crystals implanted by oxygen (E ~ 200 keV, dose ~ 10¹⁶-10¹⁷ cm⁻²) at enhanced hydrostatic pressure, additionally stimulated SiOx precipitation close to the implanted layer

Performance Improvement for Quasi Periodical Disturbances in PH Control

Proper operation of control systems is essential for achieving good economic results and reducing control effort. The paper is focused on presenting a new application of a well-known concept. The main scope of the paper is a practical presentation of obtaining a minimum process performance index by means of known statistical tools. This is achievable by appropriate selection of the correction value for set-point and the width of the time window of a statistical algorithm. The proposed novel algorithm was successfully implemented in the pilot neutralization process. On one hand, the proposed algorithm is a corrector of the statistical properties of the control error, and, on the other one, of a set point of the control system

Changes in photosynthesis during leaf expansion in Corymbia gummifera

Growth, pigment levels and various photosynthesis parameters were measured in expanding leaves of Corymbia gummifera (Solander ex Gaertner) Hochreutiner. C. gummifera trees were studied growing in sandstone plateau woodland communities in Royal National Park, New South Wales, in a recently burned open habitat. Young leaves (horizontally oriented to maximise light exposure) were found to be conspicuously red until they reached approximately 75% of their full size. As the leaves expanded, anthocyanin content declined and chlorophyll levels proportionately increased. Young red leaves showed net negative carbon assimilation rates, although CO2 assimilation rate, transpiration rate, stomatal conductance, actual quantum yield of PSII (ΦPSII) and apparent electron transport rate (ETR) all increased in a similar pattern as the leaves expanded. Measurements of maximum quantum yield of dark-adapted leaves (Fv/Fm) were also correlated with leaf area. Younger leaves had lower Fv/Fm ratios than did mature leaves, whether measured at midday or 2 h after sunset, indicating that young leaves exhibited some degree of chronic photoinhibition. It is concluded that C. gummifera exhibits a transient red pattern of anthocyanin expression and that photosynthesis is limited in young leaves because of low stomatal conductance, low chlorophyll content, immature chloroplasts and an attenuation of light caused by anthocyanins