Noncontacting device to indicate deflection of turbopump internal rotating parts

Phase 2 (development) which was concluded for the ultrasonic Doppler device and the light-pipe-reflectance device is reported. An ultrasonic Doppler breadboard system was assembled which accurately measured runout in the J-2 LOX pump impeller during operation. The transducer was mounted on the outside of the pump volute using a C-clamp. Vibration was measured by conducting the ultrasonic wave through the volute housing and through the fluid in the volute to the impeller surface. The impeller vibration was also measured accurately using the light-pipe probe mounted in an elastomeric-gland fitting in the pump case. A special epoxy resin developed for cryogenic applications was forced into the end of the fiber-optic probe to retain the fibers. Subsequently, the probe suffered no damage after simultaneous exposure to 2150 psi and 77 F. Preliminary flash X-radiographs were taken of the turbine wheel and the shaft-bearing-seal assembly, using a 2-megavolt X-ray unit. Reasonable resolution and contrast was obtained. A fast-neutron detector was fabricated and sensitivity was measured. The results demonstrated that the technique is feasible for integrated-time measurements requiring, perhaps, 240 revolutions to obtain sufficient exposure at 35,000 rpm. The experimental verification plans are included

Noncontacting devices to indicate deflection and vibration of turbopump internal rotating parts

Published report discusses feasibility of ultrasonic techniques; neutron techniques; X-radiography; optical devices; gamma ray devices; and conventional displacement sensors. Use of signal transmitters in place of slip rings indicated possible improvement and will be subject of futher study

Direct Dark Matter Detection with Velocity Distribution in the Eddington approach

Exotic dark matter together with the vacuum energy (associated with the cosmological constant) seem to dominate the Universe. Thus its direct detection is central to particle physics and cosmology. Supersymmetry provides a natural dark matter candidate, the lightest supersymmetric particle (LSP). One essential ingredient in obtaining the direct detection rates is the density and the velocity distribution of the LSP in our vicinity. In the present paper we study simultaneously density profiles and velocity distributions in the context of the Eddington approach. In such an approach, unlike the commonly assumed Maxwell-Boltzmann (M-B) distribution, the upper bound of the velocity arises naturally from the potential.Comment: 21 LaTex pages, 27 figure

Technical note: a simple procedure for removing temporal discontinuities in ERA-Interim upper stratospheric temperatures for use in nudged chemistry-climate model simulations

This note describes a simple procedure for removing unphysical temporal discontinuities in ERA-Interim upper stratospheric global mean temperatures in March 1985 and August 1998 that have arisen due to changes in satellite radiance data used in the assimilation. The derived temperature adjustments (offsets) are suitable for use in stratosphere-resolving chemistry-climate models that are nudged (relaxed) to ERA-Interim winds and temperatures. Simulations using a nudged version of the Canadian Middle Atmosphere Model (CMAM) show that the inclusion of the temperature adjustments produces temperature time series that are devoid of the large jumps in 1985 and 1998. Due to its strong temperature dependence, the simulated upper stratospheric ozone is also shown to vary smoothly in time, unlike in a nudged simulation without the adjustments where abrupt changes in ozone occur at the times of the temperature jumps. While the adjustments to the ERA-Interim temperatures remove significant artefacts in the nudged CMAM simulation, spurious transient effects that arise due to water vapour and persist for about 5 yr after the 1979 switch to ERA-Interim data are identified, underlining the need for caution when analysing trends in runs nudged to reanalyses

Performance analysis of a new energy-efficient variable supply pressure electro-hydraulic motion control system

Electro-hydraulic actuation is used in many motion control applications due to its high power density, excellent dynamic response and good durability. However fluid power actuation has been shown to be very energy inefficient, with an average efficiency for fluid power systems across all industries of 22% in the USA. This is a very significant problem, given that 3% of the energy used by mankind is transmitted in this way.The key challenge for researchers is to reduce energy losses in hydraulic actuation systems without increasing weight, size, and noise, and without reducing speed of response. Conventional high performance electro-hydraulic motion control systems use a fixed supply pressure with valve-controlled actuators (FPVC). This is inherently inefficient due to the need to use a valve to throttle the flow required by each actuator in the system down to match its load pressure. In this paper, a new load-prediction based method is proposed, in which the supply pressure is varied to track the pressure required by any actuator branch. By implementing this model-based approach using a high response servomotor-driven pump, it is shown that the dynamic response remains excellent. The load model not only allows feedforward control for servomotor speed based on the motion demand, but also feedforward for the control valves to supplement conventional proportional-integral feedback control.The new variable supply pressure valve-controlled (VPVC) method is investigated in simulation and experimentally using a two-axis hydraulic robot arm supplied by an axial piston pump. The performance has been rigorously compared with the same robot arm using a fixed supply pressure and proportional-integral joint position control. Experimental results showed that up to 70% hydraulic power saving was achieved, and that the dynamic tracking errors for VPVC were about half that for FPVC as a result of using feedforward control.</p

A Field Effect Transitor based on the Mott Transition in a Molecular Layer

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.Comment: Revtex 11pages, Figures available upon reques

On well-covered triangulations: Part I

AbstractA graph G is said to be well-covered if every maximal independent set of vertices has the same cardinality. A planar (simple) graph in which each face is a triangle is called a triangulation. It is the aim of this paper to prove that there are no 5-connected planar well-covered triangulations

Evidence for Strong Itinerant Spin Fluctuations in the Normal State of CeFeAsO(0.89)F(0.11) Iron-Oxypnictides

The electronic structure in the normal state of CeFeAsO0.89F0.11 oxypnictide superconductors has been investigated with x-ray absorption and photoemission spectroscopy. All the data exhibit signatures of Fe d-electron itinerancy. Exchange multiplets appearing in the Fe 3s core level indicate the presence of itinerant spin fluctuations. These findings suggest that the underlying physics and the origin of superconductivity in these materials are likely to be quite different from those of the cuprate high-temperature superconductors. These materials provide opportunities for elucidating the role of magnetic fluctuations in high-temperature superconductivity.Comment: Shorter version. Accepted in Phys. Rev. Let

Stark shift and field ionization of arsenic donors in 28^{28}Si-SOI structures

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$\mu$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $\eta_a=-1.9\pm0.2\times10^{-3} \mu$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.Comment: 5 pages, 3 figure