High frequency polarization switching of a thin ferroelectric film

We consider both experimentally and analytically the transient oscillatory process that arises when a rapid change in voltage is applied to a $Ba_xSr_{1-x}TiO_3$ ferroelectric thin film deposited on an $Mg0$ substrate. High frequency ($\approx 10^{8} rad/s$) polarization oscillations are observed in the ferroelectric sample. These can be understood using a simple field-polarization model. In particular we obtain analytic expressions for the oscillation frequency and the decay time of the polarization fluctuation in terms of the material parameters. These estimations agree well with the experimental results

Two-dimensional electron gas at the interface of Ba<inf>0.8</inf>Sr<inf>0.2</inf>TiO<inf>3</inf>ferroelectric and LaMnO<inf>3</inf>antiferomagnet

© 2017, Pleiades Publishing, Inc. The temperature dependence of the electrical resistance has been studied for heterostructures formed by antiferromagnetic LaMnO 3 single crystals of different orientations with epitaxial films of ferroelectric Ba 0.8 Sr 0.2 TiO 3 deposited onto them. The measured electrical resistance is compared to that exhibited by LaMnO 3 single crystals without the films. It is found that, in the samples with the film, for which the axis of polarization in the ferroelectric is directed along the perpendicular to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior below 160 K. The numerical simulations of the structural and electronic characteristics of the BaTiO 3 /LaMnO 3 ferroelectric−antiferromagnet heterostructure has been performed. The transition to the state with two-dimensional electron gas at the interface is demonstrated

Two-dimensional electron gas at the interface of Ba<inf>0.8</inf>Sr<inf>0.2</inf>TiO<inf>3</inf>ferroelectric and LaMnO<inf>3</inf>antiferomagnet

© 2017, Pleiades Publishing, Inc. The temperature dependence of the electrical resistance has been studied for heterostructures formed by antiferromagnetic LaMnO 3 single crystals of different orientations with epitaxial films of ferroelectric Ba 0.8 Sr 0.2 TiO 3 deposited onto them. The measured electrical resistance is compared to that exhibited by LaMnO 3 single crystals without the films. It is found that, in the samples with the film, for which the axis of polarization in the ferroelectric is directed along the perpendicular to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior below 160 K. The numerical simulations of the structural and electronic characteristics of the BaTiO 3 /LaMnO 3 ferroelectric−antiferromagnet heterostructure has been performed. The transition to the state with two-dimensional electron gas at the interface is demonstrated