3,685 research outputs found
Magnetic Properties of the low dimensional spin system (VO)PO: ESR and susceptibility
Experimental results on magnetic resonance (ESR) and magnetic susceptibility
are given for single crystalline (VO)PO. The crystal growth
procedure is briefly discussed. The susceptibility is interpreted numerically
using a model with alternating spin chains. We determine =51 K and
=0.2. Furthermore we find a spin gap of meV from our ESR
measurements. Using elastic constants no indication of a phase transition
forcing the dimerization is seen below 300 K.Comment: 7 pages, REVTEX, 7 figure
Energy transfer processes in Er-doped SiO2 sensitized with Si nanocrystals
We present a high-resolution photoluminescence study of Er-doped SiO2
sensitized with Si nanocrystals (Si NCs). Emission bands originating from
recombination of excitons confined in Si NCs and of internal transitions within
the 4f-electron core of Er3+ ions, and a band centered at lambda = 1200nm have
been identified. Their kinetics have been investigated in detail. Based on
these measurements, we present a comprehensive model for energy transfer
mechanisms responsible for light generation in this system. A unique picture of
energy flow between subsystems of Er3+ and Si NCs is developed, yielding truly
microscopic information on the sensitization effect and its limitations. In
particular, we show that most of the Er3+ ions available in the system are
participating in the energy exchange. The long standing problem of apparent
loss of optical activity of majority of Er dopants upon sensitization with Si
NCs is clarified and assigned to appearance of a very efficient energy exchange
mechanism between Si NCs and Er3+ ions. Application potential of SiO2:Er
sensitized by Si NCs is discussed in view of the newly acquired microscopic
insight.Comment: 30 pages 13 figure
Dispersion and damping of zone-boundary magnons in the noncentrosymmetric superconductor CePt3Si
Inelastic neutron scattering (INS) is employed to study damped spin-wave
excitations in the noncentrosymmetric heavy-fermion superconductor CePt3Si
along the antiferromagnetic Brillouin-zone boundary in the low-temperature
magnetically ordered state. Measurements along the (1/2 1/2 L) and (H H 1/2-H)
reciprocal-space directions reveal deviations in the spin-wave dispersion from
the previously reported model. Broad asymmetric shape of the peaks in energy
signifies strong spin-wave damping by interactions with the particle-hole
continuum. Their energy width exhibits no evident anomalies as a function of
momentum along the (1/2 1/2 L) direction, which could be attributed to
Fermi-surface nesting effects, implying the absence of pronounced commensurate
nesting vectors at the magnetic zone boundary. In agreement with a previous
study, we find no signatures of the superconducting transition in the magnetic
excitation spectrum, such as a magnetic resonant mode or a superconducting spin
gap, either at the magnetic ordering wavevector (0 0 1/2) or at the zone
boundary. However, the low superconducting transition temperature in this
material still leaves the possibility of such features being weak and therefore
hidden below the incoherent background at energies ~0.1 meV, precluding their
detection by INS
Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector
This paper reports on the sensor R&D activity for the CMS pixel detector.
Devices featuring several design and technology options have been irradiated up
to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were
bump bonded to unirradiated readout chips and tested using high energy pions in
the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed
full analogue readout and therefore a good characterization of the sensors in
terms of noise and charge collection properties. The position dependence of
signal is presented and the differences between the two sensor options are
discussed.Comment: Contribution to the IEEE-NSS Oct. 2003, Portland, OR, USA, submitted
to IEEE-TNS 7 pages, 8 figures, 1 table. Revised, title change
Extraction of electric field in heavily irradiated silicon pixel sensors
A new method for the extraction of the electric field in the bulk of heavily
irradiated silicon pixel sensors is presented. It is based on the measurement
of the Lorentz deflection and mobility of electrons as a function of depth. The
measurements were made at the CERN H2 beam line, with the beam at a shallow
angle with respect to the pixel sensor surface. The extracted electric field is
used to simulate the charge collection and the Lorentz deflection in the pixel
sensor. The simulated charge collection and the Lorentz deflection is in good
agreement with the measurements both for non-irradiated and irradiated up to
1E15 neq/cm2 sensors.Comment: 6 pages, 11 figures, presented at the 13th International Workshop on
Vertex Detectors for High Energy Physics, September 13-18, 2004,
Menaggio-Como, Italy. Submitted to Nucl. Instr. Meth.
Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
We show that doubly peaked electric fields are necessary to describe
grazing-angle charge collection measurements of irradiated silicon pixel
sensors. A model of irradiated silicon based upon two defect levels with
opposite charge states and the trapping of charge carriers can be tuned to
produce a good description of the measured charge collection profiles in the
fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model
correctly predicts the variation in the profiles as the temperature is changed
from -10C to -25C. The measured charge collection profiles are inconsistent
with the linearly-varying electric fields predicted by the usual description
based upon a uniform effective doping density. This observation calls into
question the practice of using effective doping densities to characterize
irradiated silicon.Comment: 8 pages, LaTeX document, 10 figures. Presented at Pixel 2005
Workshop, Bonn, Sept 2005. Small cosmetic revisions in response to referee
comments and to fix broken reference link
Simulation of Heavily Irradiated Silicon Pixel Detectors
We show that doubly peaked electric fields are necessary to describe
grazing-angle charge collection measurements of irradiated silicon pixel
sensors. A model of irradiated silicon based upon two defect levels with
opposite charge states and the trapping of charge carriers can be tuned to
produce a good description of the measured charge collection profiles in the
fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model
correctly predicts the variation in the profiles as the temperature is changed
from -10C to -25C. The measured charge collection profiles are inconsistent
with the linearly-varying electric fields predicted by the usual description
based upon a uniform effective doping density. This observation calls into
question the practice of using effective doping densities to characterize
irradiated silicon. The model is now being used to calibrate pixel hit
reconstruction algorithms for CMS.Comment: Invited talk at International Symposium on the Development of
Detectors for Particle, AstroParticle and Synchrtron Radiation Experiments,
Stanford Ca (SNIC06) 8 pages, LaTeX, 11 eps figure
A double junction model of irradiated silicon pixel sensors for LHC
In this paper we discuss the measurement of charge collection in irradiated
silicon pixel sensors and the comparison with a detailed simulation. The
simulation implements a model of radiation damage by including two defect
levels with opposite charge states and trapping of charge carriers. The
modeling proves that a doubly peaked electric field generated by the two defect
levels is necessary to describe the data and excludes a description based on
acceptor defects uniformly distributed across the sensor bulk. In addition, the
dependence of trap concentrations upon fluence is established by comparing the
measured and simulated profiles at several fluences and bias voltages.Comment: Talk presented at the 10th European Symposium on Semiconductor
Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figure
Ion counting efficiencies at the IGISOL facility
At the IGISOL-JYFLTRAP facility, fission mass yields can be studied at high
precision. Fission fragments from a U target are passing through a Ni foil and
entering a gas filled chamber. The collected fragments are guided through a
mass separator to a Penning trap where their masses are identified. This
simulation work focuses on how different fission fragment properties (mass,
charge and energy) affect the stopping efficiency in the gas cell. In addition,
different experimental parameters are varied (e. g. U and Ni thickness and He
gas pressure) to study their impact on the stopping efficiency. The simulations
were performed using the Geant4 package and the SRIM code. The main results
suggest a small variation in the stopping efficiency as a function of mass,
charge and kinetic energy. It is predicted that heavy fragments are stopped
about 9% less efficiently than the light fragments. However it was found that
the properties of the U, Ni and the He gas influences this behavior. Hence it
could be possible to optimize the efficiency.Comment: 52 pages, 44 figure
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