Cotunneling drag effect in Coulomb-coupled quantum dots

In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not always understood, even though drag effects are sufficiently general to be seen in many low-dimensional systems. In this Letter, we observe Coulomb drag in a Coulomb-coupled double quantum dot (CC-DQD) and, through both experimental and theoretical arguments, identify cotunneling as essential to obtaining a correct qualitative understanding of the drag behavior.Comment: Main text: 5 pages, 5 figures; SM: 11 pages, 5 figures, 1 tabl

Probabilistic Fragmentation and Effective Power Law

A simple fragmentation model is introduced and analysed. We show that, under very general conditions, an effective power law for the mass distribution arises with realistic exponent. This exponent has a universal limit, but in practice the effective exponent depends on the detailed breaking mechanism and the initial conditions. This dependence is in good agreement with experimental results of fragmentation.Comment: 4 pages Revtex, 2 figures, zipped and uuencode

Pseudospin-Resolved Transport Spectroscopy of the Kondo Effect in a Double Quantum Dot

We report measurements of the Kondo effect in a double quantum dot (DQD), where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage on both dots shows a zero-bias peak in conductance, analogous to that observed for spin Kondo in single dots. Breaking the orbital degeneracy splits the Kondo resonance in the tunneling density of states above and below the Fermi energy of the leads, with the resonances having different pseudospin character. Using pseudospin-resolved spectroscopy, we demonstrate the pseudospin character by observing a Kondo peak at only one sign of the bias voltage. We show that even when the pseudospin states have very different tunnel rates to the leads, a Kondo temperature can be consistently defined for the DQD system.Comment: Text and supplementary information. Text: 4 pages, 5 figures. Supplementary information: 4 pages, 4 figure

Singlet-triplet transition in a single-electron transistor at zero magnetic field

We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak at zero bias. For even numbers of electrons we generally observe Kondo-like features corresponding to excited states. For the latter, the excitation energy often decreases with gate voltage until a new zero-bias Kondo peak results. We ascribe this behavior to a singlet-triplet transition in zero magnetic field driven by the change of shape of the potential that confines the electrons in the SET.Comment: 4 p., 4 fig., 5 new ref. Rewrote 1st paragr. on p. 4. Revised author list. More detailed fit results on page 3. A plotting error in the horizontal axis of Fig. 1b and 3 was corrected, and so were the numbers in the text read from those fig. Fig. 4 was modified with a better temperature calibration (changes are a few percent). The inset of this fig. was removed as it is unnecessary here. Added remarks in the conclusion. Typos are correcte

Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems

The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The high-density linear conductivity extrapolates to zero at a density close to the critical density.Comment: 4 Figure

Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs

The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.Comment: 3 pages, 3 figure

From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor

We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. When an unpaired electron is localized within the transistor, the Kondo effect is observed. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a cross-over between the Kondo and mixed-valence regimes of the Anderson model.Comment: 3 pages plus one 2 page postscript file of 5 figures. Submitted to PR