Spin Polarized Transport Through a Single-Molecule Magnet: Current-Induced Magnetic Switching

Magnetic switching of a single-molecule magnet (SMM) due to spin-polarized current is investigated theoretically. The charge transfer between the electrodes takes place via the lowest unoccupied molecular orbital (LUMO) of the SMM. Generally, the double occupancy of the LUMO level, and a finite on-site Coulomb repulsion, is taken into account. Owing to the exchange interaction between electrons in the LUMO level and the SMM's spin, the latter can be reversed. The perturbation approach (Fermi golden rule) is applied to calculate current-voltage characteristics. The influence of Coulomb interactions on the switching process is also analyzed.Comment: 5 pages with 4 EPS figures; version as accepted for publication in Phys. Rev. B (more general model introduced

Theory of scanning gate microscopy

A systematic theory of the conductance measurements of non-invasive (weak probe) scanning gate microscopy is presented that provides an interpretation of what precisely is being measured. A scattering approach is used to derive explicit expressions for the first and second order conductance changes due to the perturbation by the tip potential in terms of the scattering states of the unperturbed structure. In the case of a quantum point contact, the first order correction dominates at the conductance steps and vanishes on the plateaus where the second order term dominates. Both corrections are non-local for a generic structure. Only in special cases, such as that of a centrally symmetric quantum point contact in the conductance quantization regime, can the second order correction be unambiguously related with the local current density. In the case of an abrupt quantum point contact we are able to obtain analytic expressions for the scattering eigenfunctions and thus evaluate the resulting conductance corrections.Comment: 19 pages, 7 figure

Signatures of electron correlations in the transport properties of quantum dots

The transition matrix elements between the correlated $N$ and $N\!+\!1$ electron states of a quantum dot are calculated by numerical diagonalization. They are the central ingredient for the linear and non--linear transport properties which we compute using a rate equation. The experimentally observed variations in the heights of the linear conductance peaks can be explained. The knowledge of the matrix elements as well as the stationary populations of the states allows to assign the features observed in the non--linear transport spectroscopy to certain transition and contains valuable information about the correlated electron states.Comment: 4 pages (revtex,27kB) + 3 figures in one file ziped and uuencoded (postscript,33kB), to appear in Phys.Rev.B as Rapid Communicatio

A Circuit Model for Domain Walls in Ferromagnetic Nanowires: Application to Conductance and Spin Transfer Torques

We present a circuit model to describe the electron transport through a domain wall in a ferromagnetic nanowire. The domain wall is treated as a coherent 4-terminal device with incoming and outgoing channels of spin up and down and the spin-dependent scattering in the vicinity of the wall is modelled using classical resistances. We derive the conductance of the circuit in terms of general conductance parameters for a domain wall. We then calculate these conductance parameters for the case of ballistic transport through the domain wall, and obtain a simple formula for the domain wall magnetoresistance which gives a result consistent with recent experiments. The spin transfer torque exerted on a domain wall by a spin-polarized current is calculated using the circuit model and an estimate of the speed of the resulting wall motion is made.Comment: 10 pages, 5 figures; submitted to Physical Review

Electron Transport through Disordered Domain Walls: Coherent and Incoherent Regimes

We study electron transport through a domain wall in a ferromagnetic nanowire subject to spin-dependent scattering. A scattering matrix formalism is developed to address both coherent and incoherent transport properties. The coherent case corresponds to elastic scattering by static defects, which is dominant at low temperatures, while the incoherent case provides a phenomenological description of the inelastic scattering present in real physical systems at room temperature. It is found that disorder scattering increases the amount of spin-mixing of transmitted electrons, reducing the adiabaticity. This leads, in the incoherent case, to a reduction of conductance through the domain wall as compared to a uniformly magnetized region which is similar to the giant magnetoresistance effect. In the coherent case, a reduction of weak localization, together with a suppression of spin-reversing scattering amplitudes, leads to an enhancement of conductance due to the domain wall in the regime of strong disorder. The total effect of a domain wall on the conductance of a nanowire is studied by incorporating the disordered regions on either side of the wall. It is found that spin-dependent scattering in these regions increases the domain wall magnetoconductance as compared to the effect found by considering only the scattering inside the wall. This increase is most dramatic in the narrow wall limit, but remains significant for wide walls.Comment: 23 pages, 12 figure

Electron backscattering in a cavity: ballistic and coherent effects

Numerous experimental and theoretical studies have focused on low-dimensional systems locally perturbed by the biased tip of a scanning force microscope. In all cases either open or closed weakly gate-tunable nanostructures have been investigated, such as quantum point contacts, open or closed quantum dots, etc. We study the behaviour of the conductance of a quantum point contact with a gradually forming adjacent cavity in series under the influence of a scanning gate. Here, an initially open quantum point contact system gradually turns into a closed cavity system. We observe branches and interference fringes known from quantum point contacts coexisting with irregular conductance fluctuations. Unlike the branches, the fluctuations cover the entire area of the cavity. In contrast to previous studies, we observe and investigate branches under the influence of the confining stadium potential, which is gradually built up. We find that the branches exist only in the area surrounded by cavity top gates. As the stadium shrinks, regular fringes originate from tip-induced constrictions leading to quantized conduction. In addition, we observe arc-like areas reminiscent of classical electron trajectories in a chaotic cavity. We also argue that electrons emanating from the quantum point contact spread out like a fan leaving branch-like regions of enhanced backscattering.Comment: 7 pages, 4 figure

Current induced distortion of a magnetic domain wall

We consider the spin torque induced by a current flowing ballistically through a magnetic domain wall. In addition to a global pressure in the direction of the electronic flow, the torque has an internal structure of comparable magnitude due to the precession of the electrons' spins at the "Larmor" frequency. As a result, the profile of the domain wall is expected to get distorted by the current and acquires a periodic sur-structure.Comment: 5 pages, 3 eps figure

Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor

We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C$_{60}$ single electron transistor experiment by Park {\em et al.} {[Nature {\bf 407}, 57 (2000)].} We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.Comment: 7 pages, 6 figure

Level Statistics and Localization for Two Interacting Particles in a Random Potential

We consider two particles with a local interaction $U$ in a random potential at a scale $L_1$ (the one particle localization length). A simplified description is provided by a Gaussian matrix ensemble with a preferential basis. We define the symmetry breaking parameter $\mu \propto U^{-2}$ associated to the statistical invariance under change of basis. We show that the Wigner-Dyson rigidity of the energy levels is maintained up to an energy $E_{\mu}$. We find that $E_{\mu} \propto 1/\sqrt{\mu}$ when $\Gamma$ (the inverse lifetime of the states of the preferential basis) is smaller than $\Delta_2$ (the level spacing), and $E_{\mu} \propto 1/\mu$ when $\Gamma > \Delta_2$. This implies that the two-particle localization length $L_2$ first increases as $|U|$ before eventually behaving as $U^2$.Comment: 4 pages REVTEX, 4 Figures EPS, UUENCODE

Nuclear spin relaxation probed by a single quantum dot

We present measurements on nuclear spin relaxation probed by a single quantum dot in a high-mobility electron gas. Current passing through the dot leads to a spin transfer from the electronic to the nuclear spin system. Applying electron spin resonance the transfer mechanism can directly be tuned. Additionally, the dependence of nuclear spin relaxation on the dot gate voltage is observed. We find electron-nuclear relaxation times of the order of 10 minutes