Development of EM-CCD-based X-ray detector for synchrotron applications

A high speed, low noise camera system for crystallography and X-ray imaging applications is developed and successfully demonstrated. By coupling an electron-multiplying (EM)-CCD to a 3:1 fibre-optic taper and a CsI(Tl) scintillator, it was possible to detect hard X-rays. This novel approach to hard X-ray imaging takes advantage of sub-electron equivalent readout noise performance at high pixel readout frequencies of EM-CCD detectors with the increase in the imaging area that is offered through the use of a fibre-optic taper. Compared with the industry state of the art, based on CCD camera systems, a high frame rate for a full-frame readout (50 ms) and a lower readout noise (<1 electron root mean square) across a range of X-ray energies (6–18 keV) were achieved

Performance Testing of a Novel Off-plane Reflection Grating and Silicon Pore Optic Spectrograph at PANTER

An X-ray spectrograph consisting of radially ruled off-plane reflection gratings and silicon pore optics was tested at the Max Planck Institute for extraterrestrial Physics PANTER X-ray test facility. The silicon pore optic (SPO) stack used is a test module for the Arcus small explorer mission, which will also feature aligned off-plane reflection gratings. This test is the first time two off-plane gratings were actively aligned to each other and with a SPO to produce an overlapped spectrum. The gratings were aligned using an active alignment module which allows for the independent manipulation of subsequent gratings to a reference grating in three degrees of freedom using picomotor actuators which are controllable external to the test chamber. We report the line spread functions of the spectrograph and the actively aligned gratings, and plans for future development.Comment: Draft Version March 19, 201

Brief of Professor Jeffrey D. Kahn as Amicus Curiae in Support of Plaintiffs-Appellees

This is an amicus brief that in support of plaintiffs-appellees in Elhady v. Kable, an important terrorist watchlisting case in the United States Court of Appeals for the Fourth Circuit

Application of Graphene within Optoelectronic Devices and Transistors

Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in optoelectronic and semiconducting devices. Whereas on one hand, graphene is highly transparent due to its atomic thickness, the material does exhibit a strong interaction with photons. This has clear advantages over existing materials used in photonic devices such as Indium-based compounds. Moreover, the material can be used to 'trap' light and alter the incident wavelength, forming the basis of the plasmonic devices. We also highlight upon graphene's nonlinear optical response to an applied electric field, and the phenomenon of saturable absorption. Within the context of logical devices, graphene has no discernible band-gap. Therefore, generating one will be of utmost importance. Amongst many others, some existing methods to open this band-gap include chemical doping, deformation of the honeycomb structure, or the use of carbon nanotubes (CNTs). We shall also discuss various designs of transistors, including those which incorporate CNTs, and others which exploit the idea of quantum tunneling. A key advantage of the CNT transistor is that ballistic transport occurs throughout the CNT channel, with short channel effects being minimized. We shall also discuss recent developments of the graphene tunneling transistor, with emphasis being placed upon its operational mechanism. Finally, we provide perspective for incorporating graphene within high frequency devices, which do not require a pre-defined band-gap.Comment: Due to be published in "Current Topics in Applied Spectroscopy and the Science of Nanomaterials" - Springer (Fall 2014). (17 pages, 19 figures

Graphene Photonics and Optoelectronics

The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultra-wide-band tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light emitting devices, to touch screens, photodetectors and ultrafast lasers. Here we review the state of the art in this emerging field.Comment: Review Nature Photonics, in pres

The noise performance of electron-multiplying charge-coupled devices at X-ray energies

Electron-multiplying charge-coupled devices (EMCCDs) are used in low-light-level (L3) applications for detecting optical, ultraviolet, and near-infrared photons (10–1100 nm). The on-chip gain process is able to increase the detectability of any signal collected by the device through the multiplication of the signal before the output node. Thus, the effective readout noise can be reduced to subelectron levels, allowing the detection of single photons. However, this gain process introduces an additional noise component due to the stochastic nature of the multiplication. In optical applications, this additional noise has been characterized. The broadening of the detected peak is described by the excess noise factor. This factor tends to a value of √2 at high gain (>100x). In X-ray applications, the situation is improved by the effect that Fano factor f has on the shot noise associated with X-ray photon detection (f ≈ 0.12 at X-ray energies). In this paper, the effect of the detection of X-ray photons in silicon is assessed both analytically and through a Monte Carlo model of the gain amplification process. The excess noise on the signal is predicted (termed the modified Fano factor) for photon detection in an EM-CCD at X-ray energies. A hypothesis is made that the modified Fano factor should tend to 1.115 at high levels of gain (>10x). In order to validate the predictions made, measurements were taken using an 55 Fe source with Mn k-alpha X-ray energy of 5898 eV. These measurements allowed the hypothesis to be verified

Electron-multiplying CCDs for future soft X-ray spectrometers

CCDs have been used in several high resolution soft X-ray spectrometers for both space and terrestrial applications such as the Reflection Grating Spectrometer on XMM-Newton and the Super Advanced X-ray Emission Spectrometer at the Paul Scherrer Institut in Switzerland. However, with their ability to use multiplication gain to amplify signal and suppress readout noise, EM-CCDs are being considered instead of CCDs for future soft X-ray spectrometers. When detecting low energy X-rays, EM-CCDs are able to increase the Signal-to-Noise ratio of the device, making the X-rays much easier to detect. If the signal is also significantly split between neighbouring pixels, the increase in the size of the signal will make complete charge collection and techniques such as centroiding easier to accomplish. However, multiplication gain from an EM-CCD does cause a degradation of the energy resolution of the device and there are questions about how the high field region in an EM-CCD will behave over time in high radiation environments. This paper analyses the possible advantages and disadvantages of using EM-CCDs for high resolution soft X-ray spectroscopy and suggests in which situations using them would not only be possible, but also beneficial to the instrument

Developing a high-resolution x-ray imager using electron-multiplying (EM) CCDs

Applications at synchrotron facilities such as macromolecular crystallography and high energy X-ray diffraction require high resolution imaging detectors with high dynamic range and large surface area. Current systems can be split into two main categories: hybrid pixel detectors and scintillator-coupled Charge-Coupled Devices (CCDs). Whilst both have limitations, CCD-based systems (coupled to fibre-optics to increase imaging area) are often used in these applications due to their small pixels and the high resolution. Electron-Multiplication CCDs (EM-CCDs) are able to suppress the readout noise associated with increased readout speed offering a low noise, high speed detector solution. A previous pilot study using a small-area (8 mm × 8 mm) scintillator-coupled EM-CCD found that through high frame-rates, low noise and novel uses of photon-counting, resolution could be improved from over 80 μm to 25 μm at 2 fps. To further improve this detector system, high speed readout electronics can be used alongside a fibre-optic taper and EM-CCD to create a “best of both worlds” solution consisting of the high resolution of a CCD, along with the low noise, high speed (high dynamic range) and large effective area of pixel detectors. This paper details the developments in the study and discusses the latest results and their implication on the system design

<i>ABCB1</i> (MDR1) induction defines a common resistance mechanism in paclitaxel- and olaparib-resistant ovarian cancer cells

BACKGROUND: Clinical response to chemotherapy for ovarian cancer is frequently compromised by the development of drug-resistant disease. The underlying molecular mechanisms and implications for prescription of routinely prescribed chemotherapy drugs are poorly understood. METHODS: We created novel A2780-derived ovarian cancer cell lines resistant to paclitaxel and olaparib following continuous incremental drug selection. MTT assays were used to assess chemosensitivity to paclitaxel and olaparib in drug-sensitive and drug-resistant cells±the ABCB1 inhibitors verapamil and elacridar and cross-resistance to cisplatin, carboplatin, doxorubicin, rucaparib, veliparib and AZD2461. ABCB1 expression was assessed by qRT-PCR, copy number, western blotting and immunohistochemical analysis and ABCB1 activity assessed by the Vybrant and P-glycoprotein-Glo assays. RESULTS: Paclitaxel-resistant cells were cross-resistant to olaparib, doxorubicin and rucaparib but not to veliparib or AZD2461. Resistance correlated with increased ABCB1 expression and was reversible following treatment with the ABCB1 inhibitors verapamil and elacridar. Active efflux of paclitaxel, olaparib, doxorubicin and rucaparib was confirmed in drug-resistant cells and in ABCB1-expressing bacterial membranes. CONCLUSIONS: We describe a common ABCB1-mediated mechanism of paclitaxel and olaparib resistance in ovarian cancer cells. Optimal choice of PARP inhibitor may therefore limit the progression of drug-resistant disease, while routine prescription of first-line paclitaxel may significantly limit subsequent chemotherapy options in ovarian cancer patients