Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility ({\mu}h) in the transport direction and alleviates charge flow towards the gate oxide. {\mu}h enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height ({\phi}) in SiGe. Similar field acceleration factor ({\Gamma}) for threshold voltage shift ({\Delta}VT) and increase in noise ({\Delta}SVG) in Si and SiGe suggests identical degradation mechanisms.Comment: 4 figures, 3 pages, accepted for publication in IEEE ED

Microtopography of the eggshell of Menacanthus eurysternus (Phthiraptera: Amblycera)

The egg laying sites, pattern and the egg morphology (SEM) of an amblyceran louse parasitizing Bank Myna (Acridotheres ginginianus) have been recorded. Unlike most of the species of the genus, Menacanthus studied so far, the eggshell of M. eurysternus lacks the apophyses (bristle like outgrowths arising from anterior portion of the eggshell). However, the opercular disc of M. eurysternus bears a polar thread and the micropyles are set along the opercular rim