Magnetic and humidity sensing properties of nanostructured Cu[x]Co[1-x]Fe2O4 synthesized by auto combustion technique

Magnetic nanomaterials (23-43 nm) of Cu$_x$Co$_{1-x}$Fe$_2$O$_4$\ (x = 0.0, 0.5 and 1.0) were synthesized by auto combustion method. The crystallite sizes of these materials were calculated from X-ray diffraction peaks. The band observed in Fourier transform infrared spectrum near 575 cm$^{-1}$ in these samples confirm the presence of ferrite phase. Conductivity measurement shows the thermal hysteresis and demonstrates the knee points at 475$^o$C, 525$^o$C and 500$^o$C for copper ferrite, cobalt ferrite and copper-cobalt mixed ferrite respectively. The hystersis M-H loops for these materials were traced using the Vibrating Sample Magnetometer (VSM) and indicate a significant increase in the saturation magnetization (M$_s$) and remanence (M$_r$) due to the substitution of Cu$^{2+}$ ions in cobalt ferrite, while the intrinsic coercivity (H$_c$) was decreasing. Among these ferrites, copper ferrite exhibits highest sensitivity for humidity.Comment: 12 pages, 7 figure

Secondary crystalline phases identification in Cu2ZnSnSe4 thin films: contributions from Raman scattering and photoluminescence

In this work, we present the Raman peak positions of the quaternary pure selenide compound Cu2ZnSnSe4 (CZTSe) and related secondary phases that were grown and studied under the same conditions. A vast discussion about the position of the X-ray diffraction (XRD) reflections of these compounds is presented. It is known that by using XRD only, CZTSe can be identified but nothing can be said about the presence of some secondary phases. Thin films of CZTSe, Cu2SnSe3, ZnSe, SnSe, SnSe2, MoSe2 and a-Se were grown, which allowed their investigation by Raman spectroscopy (RS). Here we present all the Raman spectra of these phases and discuss the similarities with the spectra of CZTSe. The effective analysis depth for the common back-scattering geometry commonly used in RS measurements, as well as the laser penetration depth for photoluminescence (PL) were estimated for different wavelength values. The observed asymmetric PL band on a CZTSe film is compatible with the presence of CZTSe single-phase and is discussed in the scope of the fluctuating potentials’ model. The estimated bandgap energy is close to the values obtained from absorption measurements. In general, the phase identification of CZTSe benefits from the contributions of RS and PL along with the XRD discussion.info:eu-repo/semantics/publishedVersio

Effect of exposure to electron beam irradiation in biopolymer papain and their electrical behaviour

33-38The obtention of biopolymer papain irradiated with 8 MeV energy of electron beam to different doses from 1 kGy to 10 kGy and the effect of the radiation on the electrical behaviour of the biopolymer have been investigated in the temperature range 29°-135<span style="font-family:Symbol;mso-ascii-font-family: " times="" new="" roman";mso-hansi-font-family:"times="" roman";mso-char-type:symbol;="" mso-symbol-font-family:symbol"="" lang="EN-GB">°C. The <i style="mso-bidi-font-style: normal">ac impedance plots indicate a single relaxation process in biopolymer papain in different temperatures. An increase in bulk electrical conductivity was noted for biopolymer papain with temperature after irradiation which is related to the hopping of charge carriers between the sites. The electrical conductivity of fresh and irradiated papain follows the universal power law and from which it is observed that the <i style="mso-bidi-font-style: normal">ac conductivity is frequency dependent and it obeys the electron tunneling model of conduction mechanism. The SEM images reveal the larger particle size with non-uniform structure upon irradiation of papain. </span

Growth and characteristics of amorphous Sb2Se3 thin films of various thicknesses for memory switching applications

Thin films of different thicknesses in the range of 200-720 nm have been deposited on glass substrates at room temperature using thermal evaporation technique. The structural investigations revealed that the as-deposited films are amorphous in nature. The surface roughness of the films shows an increasing trend at higher thickness of the films. The surface roughness of the films shows an increasing trend at higher thickness of the films. Interference fringes in the transmission spectra of these films suggest that the films are fairly smooth and uniform. The optical absorption in Sb2Se3 film is described using indirect transition and the variation in band gaps is explained on the basis of defects and disorders in the chalcogenide systems. Raman spectrum confirms the increase of orderliness with film thickness. From the I-V characteristics, a memory type switching is observed whose threshold voltage increases with film thickness. (C) 2015 Elsevier B.V. All rights reserved

Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin films

Investigations on the electrical switching, structural, optical and photoacoustic analysis have been undertaken on chalcogenide GeSe1.5S0.5 thin films of various thicknesses prepared by vacuum evaporation technique. The decrease of band gap energy with increase in film thickness has been explained using the `density of states model'. The structural units of the films are characterized using Raman spectroscopy and the deconvoluted Raman peaks obtained from Gaussian fit around 188 cm(-1), 204 cm(-1) and 214 cm(-1) favors Ge-chalcogen tetrahedral units forming corner and edge sharing tetrahedra. All the thin films samples have been exhibited memory-type electrical switching behavior. An enhancement in the threshold voltages of GeSe1.5S0.5 thin films have been observed with increase in film thickness. The thickness dependence of switching voltages provide an insight into the switching mechanism and it is explained by the Joule heating effect. (C) 2014 Elsevier B.V. All rights reserved