Weak localization in a system with a barrier: Dephasing and weak Coulomb blockade

We non-perturbatively analyze the effect of electron-electron interactions on weak localization (WL) in relatively short metallic conductors with a tunnel barrier. We demonstrate that the main effect of interactions is electron dephasing which persists down to T=0 and yields suppression of WL correction to conductance below its non-interacting value. Our results may account for recent observations of low temperature saturation of the electron decoherence time in quantum dots.Comment: published version, 10 page

Non-local Andreev reflection under ac bias

We theoretically analyze non-local electron transport in multi-terminal normal-metal-superconductor-normal-metal (NSN) devices in the presence of an external ac voltage bias. Our analysis reveals a number of interesting effects, such as, e.g., photon-assisted violation of balance between crossed Andreev reflection (CAR) and elastic cotunneling (EC). We demonstrate that at sufficiently small (typically subgap) frequencies of an external ac signal and at low temperatures the non-local conductance of the NSN device turns negative implying that in this regime CAR contribution to the non-local current dominates over that of EC. Our predictions can be directly tested in future experiments.Comment: published version, 6 pages, 3 figure

Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.Comment: revtex, 4 page