Pt nanocrystals formed by ion implantation: a defect-mediated nucleation process

The influence of ion irradiation of SiO₂ on the size of metalnanocrystals (NCs) formed by ion implantation has been investigated. Thin SiO₂ films were irradiated with high-energy Ge ions then implanted with Pt ions. Without Geirradiation, the largest Pt NCs were observed beyond the Pt projected range. With irradiation, Ge-induced structural modification of the SiO₂ layer yielded a decrease in Pt NC size with increasing Ge fluence at such depths. A defect-mediated NC nucleation mechanism is proposed and a simple yet effective means of modifying and controlling the Pt NC size is demonstrated.The authors thank the Australian Research Council for financial support

Nano-porosity in GaSb induced by swift heavy ion irradiation

Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime. The porous layer morphology differs significantly from that previously reported for low-energy, ion-irradiated GaSb. Prior to the onset of porosity, positron annihilation lifetime spectroscopy indicates the formation of small vacancy clusters in single ion impacts, while transmission electron microscopy reveals fragmentation of the GaSb into nanocrystallites embedded in an amorphous matrix. Following this fragmentation process, macroscopic porosity forms, presumably within the amorphous phase.The authors thank the Australian Research Council for support and the staff at the ANU Heavy Ion Accelerator Facility for their continued technical assistance. R.C.E. acknowledges the support from the Office of Basic Energy Sciences of the U.S. DOE (Grant No. DE-FG02-97ER45656)

Energy dependent saturation width of swift heavy ion shaped embedded Au nanoparticles

The transformation of Aunanoparticles (NPs) embedded in SiO₂ from spherical to rod-like shapes induced by swift heavy ion irradiation has been studied. Irradiation was performed with ¹⁹⁷Au ions at energies between 54 and 185 MeV. Transmission electron microscopy and small angle x-ray scatteringmeasurements reveal an energy dependent saturation width of the NP rods as well as a minimum size required for the NPs to elongate. The NP saturation width is correlated with the ion track diameter in the SiO₂. NP melting and in-plane strain in the irradiatedSiO₂ are discussed as potential mechanisms for the observed deformation.P.K. and M.C.R. thank the Australian Research Council for support. P.K., R.G., D.J.S., and M.C.R. were supported by the Australian Synchrotron Research Program, funded by the Commonwealth of Australia via the Major National Research Facilities Program

The influence of annealing conditions on the growth and structure of embedded Pt nanocrystals

The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a-SiO₂ has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scatteringmeasurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O₂, or forming gas (95% N₂: 5% H₂) at temperatures ranging from 500 °C–1300 °C form spherical NCs with mean diameters ranging from 1–14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O₂ and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 °C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm.We thank the Australian Synchrotron Research Program and the Australian Research Council for financial support

Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors

Damage formation in InP, GaP, InAs, GaAs, and the related ternary alloys Ga0.50 In0.50 P and Ga0.47 In0.53 As irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and Ga0.50 In0.50 P are readily amorphized, GaP and GaAs remain almost undamaged and InAs and Ga0.47 In0.53 As exhibit intermediate behavior. A material-dependent combination of irradiation-induced damage formation and annealing is proposed to describe the different responses of the III-V materials to electronic energy loss

T-cell production of matrix metalloproteinases and inhibition of parasite clearance by TIMP-1 during chronic Toxoplasma infection in the brain

Chronic infection with the intracellular protozoan parasite Toxoplasma gondii leads to tissue remodelling in the brain and a continuous requirement for peripheral leucocyte migration within the CNS (central nervous system). In the present study, we investigate the role of MMPs (matrix metalloproteinases) and their inhibitors in T-cell migration into the infected brain. Increased expression of two key molecules, MMP-8 and MMP-10, along with their inhibitor, TIMP-1 (tissue inhibitor of metalloproteinases-1), was observed in the CNS following infection. Analysis of infiltrating lymphocytes demonstrated MMP-8 and -10 production by CD4+ and CD8+ T-cells. In addition, infiltrating T-cells and CNS resident astrocytes increased their expression of TIMP-1 following infection. TIMP-1-deficient mice had a decrease in perivascular accumulation of lymphocyte populations, yet an increase in the proportion of CD4+ T-cells that had trafficked into the CNS. This was accompanied by a reduction in parasite burden in the brain. Taken together, these findings demonstrate a role for MMPs and TIMP-1 in the trafficking of lymphocytes into the CNS during chronic infection in the brain