Conductance of p-n-p graphene structures with 'air-bridge' top gates

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.Comment: to be published in Nano Letter

Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene

Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a large number of singly- and doubly-gated bilayer graphene (BLG) devices, we show that an insulating state appears only in devices with high mobility and low extrinsic doping. This insulating state has an associated transition temperature Tc~5K and an energy gap of ~3 meV, thus strongly suggesting a gapped broken symmetry state that is destroyed by very weak disorder. The transition to the intrinsic broken symmetry state can be tuned by disorder, out-of-plane electric field, or carrier density

Giant Nonlocality near the Dirac Point in Graphene

Transport measurements have been a powerful tool for uncovering new electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We observe a large nonlocal response near the Dirac point in fields as low as 0.1T, which persists up to room temperature. The nonlocality is consistent with the long-range flavor currents induced by lifting of spin/valley degeneracy. The effect is expected to contribute strongly to all magnetotransport phenomena near the neutrality point

How close can one approach the Dirac point in graphene experimentally?

The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap

Quantum electrodynamics with anisotropic scaling: Heisenberg-Euler action and Schwinger pair production in the bilayer graphene

We discuss quantum electrodynamics emerging in the vacua with anisotropic scaling. Systems with anisotropic scaling were suggested by Horava in relation to the quantum theory of gravity. In such vacua the space and time are not equivalent, and moreover they obey different scaling laws, called the anisotropic scaling. Such anisotropic scaling takes place for fermions in bilayer graphene, where if one neglects the trigonal warping effects the massless Dirac fermions have quadratic dispersion. This results in the anisotropic quantum electrodynamics, in which electric and magnetic fields obey different scaling laws. Here we discuss the Heisenberg-Euler action and Schwinger pair production in such anisotropic QEDComment: 5 pages, no figures, JETP Letters style, version accepted in JETP Letter

Prospects for the discovery of the next new element: Influence of projectiles with Z > 20

The possibility of forming new superheavy elements with projectiles having Z > 20 is discussed. Current research has focused on the fusion of 48Ca with actinides targets, but these reactions cannot be used for new element discoveries in the future due to a lack of available target material. The influence on reaction cross sections of projectiles with Z > 20 have been studied in so-called analog reactions, which utilize lanthanide targets carefully chosen to create compound nuclei with energetics similar to those found in superheavy element production. The reactions 48Ca, 45Sc, 50Ti, 54Cr + 159Tb, 162Dy have been studied at the Cyclotron Institute at Texas A&M University using the Momentum Achromat Recoil Spectrometer. The results of these experimental studies are discussed in terms of the influence of collective enhancements to level density for compound nuclei near closed shells, and the implications for the production of superheavy elements. We have observed no evidence to contradict theoretical predictions that the maximum cross section for the 249Cf(50Ti, 4n)295120 and 248Cm(54Cr, 4n)298120 reactions should be in the range of 10-100 fb.Comment: An invited talk given by Charles M. Folden III at the 11th International Conference on Nucleus-Nucleus Collisions (NN2012), San Antonio, Texas, USA, May 27-June 1, 2012. Also contains information presented by Dmitriy A. Mayorov and Tyler A. Werke in separate contributions to the conference. This contribution will appear in the NN2012 Proceedings in Journal of Physics: Conference Series (JPCS