Scaling and the Metal-Insulator Transition in Si/SiGe Quantum Wells

The existence of a metal-insulator transition at zero magnetic field in two- dimensional electron systems has recently been confirmed in high mobility Si-MOSFETs. In this work, the temperature dependence of the resistivity of gated Si/SiGe/Si quantum well structures has revealed a similar metal- insulator transition as a function of carrier density at zero magnetic field. We also report evidence for a Coulomb gap in the temperature dependence of the resistivity of the dilute 2D hole gas confined in a SiGe quantum well. In addition, the resistivity in the insulating phase scales with a single parameter, and is sample independent. These results are consistent with the occurrence of a metal-insulator transition at zero magnetic field in SiGe square quantum wells driven by strong hole-hole interactions.Comment: 3 pages, 3 figures, LaTe

"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures

We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors \nu=1 and 2 and, for the first time, between \nu=2 and 3 and between \nu=4 and 6. The latter are in contradiction with the original global phase diagram for the quantum Hall effect. We suggest that the application of a (perpendicular) magnetic field induces insulating behavior in metallic p-SiGe heterostructures in the same way as in Si MOSFETs. This insulator is then in competition with, and interrupted by, integer quantum Hall states leading to the multiple re-entrant transitions. The phase diagram which accounts for these transition is similar to that previously obtained in Si MOSFETs thus confirming its universal character

Projetivismo dos valores em Nietzsche

Abstract: The aim of this paper is to claim Nietzsche’s place within the philosophical tradition of projectivism. Indeed, as will be shown, although Nietzsche is almost unanimously ignored by scholars working on projectivism, during the whole development of his philosophical thought, he holds a position which can be reasonably defined as “projectivist”. Resumo: Este artigo tem por objetivo reivindicar o lugar da filosofia nietzschiana na tradição filosófica do projetivismo. Com efeito, como mostrarei, mesmo se Nietzsche é quase unanimemente ignorado nas obras dos especialistas nessa tradição, ele mantém, ao longo de seu desenvolvimento filosófico, uma posição que se pode com razão definir como “projetivista”

Metal Insulator transition at B=0 in p-SiGe

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that decreases exponentially with decreasing temperature. This behaviour, and the duality between resistivity and conductivity on the two sides of the transition, are very similar to that recently reported for high mobility Si-MOSFETs.Comment: 4 pages, REVTEX with 3 ps figure

The barocaloric effect: A Spin-off of the Discovery of High-Temperature Superconductivity

Some key results obtained in joint research projects with Alex M\"uller are summarized, concentrating on the invention of the barocaloric effect and its application for cooling as well as on important findings in the field of high-temperature superconductivity resulting from neutron scattering experiments.Comment: 26 pages, 9 figure

Maximum Metallic Conductivity in Si-MOS Structures

We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.Comment: 3 pages, 3 ps-figs, RevTex, new dat

Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs

The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/AlGaAs heterostructures: the system is insulating in zero (perpendicular) field and exhibits reentrant insulator-quantum Hall effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-T phase is related only to the electrons' spin.Comment: 4 pages, including 3 figures. We corrected several typos in the figures and caption

Metallic behavior and related phenomena in two dimensions

For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last several years, however, unusual behavior suggestive of such a transition has been reported in a variety of dilute two-dimensional electron and hole systems. The physics behind these observations is presently not understood. We review and discuss the main experimental findings and suggested theoretical models.Comment: To be published in Rev. Mod. Phy