15 research outputs found

    An Analysis of Equivalent Operator Preconditioning for Equation-Free Newton–Krylov Methods

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    Gateable suppression of spin relaxation in semiconductor FETs

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    The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries
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