Central peak position in magnetization loops of high-TcT_c superconductors

Exact analytical results are obtained for the magnetization of a superconducting thin strip with a general behavior J_c(B) of the critical current density. We show that within the critical-state model the magnetization as function of applied field, B_a, has an extremum located exactly at B_a=0. This result is in excellent agreement with presented experimental data for a YBCO thin film. After introducing granularity by patterning the film, the central peak becomes shifted to positive fields on the descending field branch of the loop. Our results show that a positive peak position is a definite signature of granularity in superconductors.Comment: $ pages, 6 figure

Paraconductivity of K-doped SrFe2As2 superconductor

Paraconductivity of the optimally K-doped SrFe2As2 superconductor is investigated within existing fluctuation mechanisms. The in-plane excess conductivity has been measured in high quality single crystals, with a sharp superconducting transition at Tc=35.5K and a transition width less than 0.3K. The data have been also acquired in external magnetic field up to 14T. We show that the fluctuation conductivity data in zero field and for temperatures close to Tc, can be explained within a three-dimensional Lawrence-Doniach theory, with a negligible Maki-Thompson contribution. In the presence of the magnetic field, it is shown that paraconductivity obeys the three-dimensional Ullah-Dorsey scaling law, above 2T and for H||c. The estimated upper critical field and the coherence length nicely agree with the available experimental data.Comment: 12 pages, 5 figure

Subthreshold antiproton production in proton-carbon reactions

Data from KEK on subthreshold antiproton as well as on pi(+-) and K(+-) production in proton-nucleus reactions are described at projectile energies between 3.5 and 12.0 GeV. We use a model which considers a hadron-nucleus reaction as an incoherent sum over collisions of the projectile with a varying number of target nucleons. It samples complete events and allows thus for the simultaneous consideration of all particle species measured. The overall reproduction of the data is quite satisfactory. It is shown that the contributions from the interaction of the projectile with groups of several target nucleons are decisive for the description of subthreshold production. Since the collective features of subthreshold production become especially significant far below the threshold, the results are extrapolated down to COSY energies. It is concluded that an antiproton measurement at ANKE-COSY should be feasible, if the high background of other particles can be efficiently suppressed.Comment: 15 pages, 5 figures, gzipped tar file, submitted to J. Phys. G v2: Modification of text due to demands of referee

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure