Revealing microstructural evolutions, mechanical properties and wear performance of wire arc additive manufacturing homogeneous and heterogeneous NiTi alloy

Heterogeneous microstructure designs have attracted a great deal of attention, not only because they have the potential to achieve an ideal combination of two conflicting properties, but also because the processes involved in their fabrication are cost-effective and can be scaled up for industrial production. The process parameters in the preparation process have an important effect on the microstructure and properties of alloy members prepared by wire arc additive manufacturing (WAAM) technology. It was expected that the spatial heterogeneous microstructure with large microstructural heterogeneities in metals can be formed through changing the process parameters. In this work, homogeneous NiTi thin-walled component and heterogeneous NiTi thin-walled component were fabricated using WAAM technology by adjusting the heat input. The effects of deposition height and heat input on the microstructure, mechanical properties and wear properties of WAAM NiTi alloys were investigated. The results show that grains were gradually refined with the increase of deposition height in the homogeneous WAAM NiTi component. The ultimate tensile strength of homogeneous WAAM NiTi component increased from 606.87 MPa to 654.45 MPa and the elongation increased from 12.72% to 15.38%, as the increase of deposition height. Moreover, the homogeneous WAAM NiTi component exhibited excellent wear resistance, the coefficient of friction decreased from 0.760 to 0.715 with the increase of deposition height. Meanwhile, the grains in the heterogeneous WAAM NiTi component shows the finest grains in the central region. The ultimate tensile strength of the lower region, middle region and upper region of heterogeneous WAAM NiTi components were 556.12 MPa, 599.53 MPa and 739.79 MPa, and the elongations were 12.98%, 16.69%, 21.74%, respectively. The coefficient of friction for the lower region, middle region and upper region of heterogeneous WAAM NiTi components were 0.713, 0.720 and 0.710, respectively. The microhardness and cyclic compression properties of the homogeneous components with higher heat input were better than those of the heterogeneous components for the same deposition height. The tensile yield strength, elongation and wear resistance of the heterogeneous components were superior compared to the homogeneous components. These results can be used to optimize the WAAM process parameters to prepare NiTi components with excellent mechanical properties

Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy

Interest in two-dimensional (2D) transition-metal dichalcogenides (TMDs) has prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy (MBE). However, growths of monolayer (ML) and bilayer (BL) WSe2—an important member of the TMD family—by the MBE method remain uncharted, probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a scanning tunneling microscopy and spectroscopy (STM/S) study of MBE-grown WSe2 ML and BL, showing atomically flat epifilm with no domain boundary (DB) defect. This contrasts epitaxial MoSe2 films grown by the same method, where a dense network of the DB defects is present. The STS measurements of ML and BL WSe2 domains of the same sample reveal not only the bandgap narrowing upon increasing the film thickness from ML to BL, but also a band-bending effect across the boundary (step) between ML and BL domains. This band-bending appears to be dictated by the edge states at steps of the BL islands. Finally, comparison is made between the STS-measured electronic bandgaps with the exciton emission energies measured by photoluminescence, and the exciton binding energies in ML and BL WSe2 (and MoSe2) are thus estimated.postprin

Treatment of insomnia in myasthenia gravis-A prospective study on non-benzodiazepine hypnotics in the treatment of myasthenia gravis patients with insomnia

Objectives: This study aimed to evaluate the efficacy and safety of non-benzodiazepine hypnotics in the treatment of myasthenia gravis (MG) patients with insomnia. Methods: This is a prospective longitudinal study. Outpatients who met the criteria for stable MG and insomnia diagnosis according to the International Classification of Sleep Disorders (third edition) were included in the study. They took a regular dose of non-benzodiazepine hypnotics (zolpidem 10 mg per night or zopiclone 7.5 mg per night) based on their own preferences. Patients received psychotherapy (including sleep health education) and were followed up for 4–5 weeks. Cases with lung diseases, respiratory disorders, or inappropriate use of hypnotic medications were excluded. The primary outcome is the difference in total Pittsburgh Sleep Quality Index (PSQI) score between baseline and the end of follow-up period. Secondary outcomes include the difference in Myasthenia Gravis Activities of Daily Living (MG-ADL) score, 7-item Generalized Anxiety Disorder Questionnaire (GAD-7), and the Patient Health Questionnaire-9 (PHQ-9) between baseline and the end of follow-up period and the safety of medication. Results: A total of 75 MG patients with insomnia were included in this study. After 4–5 weeks of treatment, the total PSQI score and MG-ADL score were lower than baseline (p < 0.01). No patients had an increased MG-ADL score. The incidence rate of adverse events was 16.0% (12 cases), including dizziness (6 cases, 8.0%), drowsiness (3 cases, 4.0%), fatigue (2 cases, 2.7%), and nausea (1 case, 1.3%), all of which were mild. No patients had new onset breathing disorders. Conclusion: Non-benzodiazepine hypnotics are safe and effective for stable MG patients who need insomnia treatment

Jet Substructure Without Trees

We present an alternative approach to identifying and characterizing jet substructure. An angular correlation function is introduced that can be used to extract angular and mass scales within a jet without reference to a clustering algorithm. This procedure gives rise to a number of useful jet observables. As an application, we construct a top quark tagging algorithm that is competitive with existing methods.Comment: 22 pages, 16 figures, version accepted by JHE

The mass area of jets

We introduce a new characteristic of jets called mass area. It is defined so as to measure the susceptibility of the jet's mass to contamination from soft background. The mass area is a close relative of the recently introduced catchment area of jets. We define it also in two variants: passive and active. As a preparatory step, we generalise the results for passive and active areas of two-particle jets to the case where the two constituent particles have arbitrary transverse momenta. As a main part of our study, we use the mass area to analyse a range of modern jet algorithms acting on simple one and two-particle systems. We find a whole variety of behaviours of passive and active mass areas depending on the algorithm, relative hardness of particles or their separation. We also study mass areas of jets from Monte Carlo simulations as well as give an example of how the concept of mass area can be used to correct jets for contamination from pileup. Our results show that the information provided by the mass area can be very useful in a range of jet-based analyses.Comment: 36 pages, 12 figures; v2: improved quality of two plots, added entry in acknowledgments, nicer form of formulae in appendix A; v3: added section with MC study and pileup correction, version accepted by JHE

Fabrication of Coaxial Si1−xGex Heterostructure Nanowires by O2 Flow-Induced Bifurcate Reactions

We report on bifurcate reactions on the surface of well-aligned Si1−xGex nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si1−xGex nanowires were grown in a chemical vapor transport process using SiCl4 gas and Ge powder as a source. After the growth of nanowires, SiCl4 flow was terminated while O2 gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO2 by the O2 gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O2 pressure without any intermediate region and enables selectively fabricated Ge/Si1−xGex or SiO2/Si1−xGex coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively

Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films

Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B$^+$ implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B$^+$ dose greater than $10^{14}$ ions cm$^{-2}$. The asymmetry and red shift in the Raman line-shape is explained in terms of quantum confinement of phonons in silicon nanostructures formed as a result of ion implantation. PL spectra shows size dependent visible luminescence at $\sim$ 1.9 eV at room temperature, which confirms the presence of silicon nanostructures. Raman studies on P$^+$ implanted samples were also done as a function of ion energy. The Raman results show an amorphous top SOS surface for sample implanted with 150 keV P$^+$ ions of dose 5 x $10^{15}$ ions cm$^{-2}$. The nanostructures are formed when the P$^+$ energy is increased to 350 keV by keeping the ion dose fixed. The GAXRD results show consistency with the Raman results.Comment: 9 Pages, 6 Figures and 1 Table, \LaTex format To appear in SILICON(SPRINGER

Diboson-Jets and the Search for Resonant Zh Production

New particles at the TeV-scale may have sizeable decay rates into boosted Higgs bosons or other heavy scalars. Here, we investigate the possibility of identifying such processes when the Higgs/scalar subsequently decays into a pair of W bosons, constituting a highly distinctive "diboson-jet." These can appear as a simple dilepton (plus MET) configuration, as a two-prong jet with an embedded lepton, or as a four-prong jet. We study jet substructure methods to discriminate these objects from their dominant backgrounds. We then demonstrate the use of these techniques in the search for a heavy spin-one Z' boson, such as may arise from strong dynamics or an extended gauge sector, utilizing the decay chain Z' -> Zh -> Z(WW^(*)). We find that modes with multiple boosted hadronic Zs and Ws tend to offer the best prospects for the highest accessible masses. For 100/fb luminosity at the 14 TeV LHC, Z' decays into a standard 125 GeV Higgs can be observed with 5-sigma significance for masses of 1.5-2.5 TeV for a range of models. For a 200 GeV Higgs (requiring nonstandard couplings, such as fermiophobic), the reach may improve to up to 2.5-3.0 TeV.Comment: 23 pages plus appendices, 9 figure