Materials Chemistry of Fullerenes, Graphenes, and Carbon Nanotubes

This Special Issue is intended as a platform for interactive material science articles with an emphasis on the preparation, functionalization chemistry, and characterization of nanocarbon compounds, as well as all aspects of physical properties of functionalized, conjugated, or hybrid nanocarbon materials, and their associated applications. Some recent advances in the field are here collected, providing new ideas for discussion of researchers working in this multidisciplinary scenario

Nanocolloids for Nanomedicine and Drug Delivery

This Special Issue highlights novel nanocolloids like magnetic nanoparticles, nanomicelles, nanoliposomes, nanocapsules, and nanoclays, stimulating novel interests and ideas in research groups involved in the development of novel nanotools within the different areas of nanomaterials. The publication of original articles contributes to scientific progress in the area of personalized medicine and further stimulates the entering into clinical praxis of such new nanosystems

Strategies to Improve Antineoplastic Activity of Drugs in Cancer Progression

The aim of this Special Issue is to collect reports regarding all the recent strategies, directed at the improvement of antineoplastic activity of drugs in cancer progression, engaging all the expertise needed for the development of new anticancer drugs: medicinal chemistry, pharmacology, molecular biology, and computational and drug delivery studies

Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs

A comprehensive temperature characterization method based on the GaNE(2)-high Raman mode and sapphire ruby R fluorescence lines from Raman spectra was developed to analyse the thermal distribution and heat transfer process of high-power flip-chip InGaN/GaN LEDs (FC LEDs). Our analysis demonstrated that in addition to the known problem that the edges of mesa were always the hottest point of FC LEDs, which was due to the current crowding effect, a noteworthy temperature difference was first observed between the sapphire substrate and n-GaN when the injection current was above 300 mA. A 'heat reservoir' was suggested to occur at the interface between the sapphire and n-GaN due to poor thermal conductivity of sapphire when a large amount of heat from the hottest spot cannot be effectively transferred to the Si mount via the active region under high injection currents