Accuracy and transferability of Gaussian approximation potential models for tungsten

We introduce interatomic potentials for tungsten in the bcc crystal phase and its defects within the Gaussian approximation potential framework, fitted to a database of first-principles density functional theory calculations. We investigate the performance of a sequence of models based on databases of increasing coverage in configuration space and showcase our strategy of choosing representative small unit cells to train models that predict properties observable only using thousands of atoms. The most comprehensive model is then used to calculate properties of the screw dislocation, including its structure, the Peierls barrier and the energetics of the vacancy-dislocation interaction. All software and raw data are available at www.libatoms.org

An accurate and transferable machine learning potential for carbon

We present an accurate machine learning (ML) model for atomistic simulations of carbon, constructed using the Gaussian approximation potential (GAP) methodology. The potential, named GAP-20, describes the properties of the bulk crystalline and amorphous phases, crystal surfaces, and defect structures with an accuracy approaching that of direct ab initio simulation, but at a significantly reduced cost. We combine structural databases for amorphous carbon and graphene, which we extend substantially by adding suitable configurations, for example, for defects in graphene and other nanostructures. The final potential is fitted to reference data computed using the optB88-vdW density functional theory (DFT) functional. Dispersion interactions, which are crucial to describe multilayer carbonaceous materials, are therefore implicitly included. We additionally account for long-range dispersion interactions using a semianalytical two-body term and show that an improved model can be obtained through an optimization of the many-body smooth overlap of atomic positions descriptor. We rigorously test the potential on lattice parameters, bond lengths, formation energies, and phonon dispersions of numerous carbon allotropes. We compare the formation energies of an extensive set of defect structures, surfaces, and surface reconstructions to DFT reference calculations. The present work demonstrates the ability to combine, in the same ML model, the previously attained flexibility required for amorphous carbon [V. L. Deringer and G. Csányi, Phys. Rev. B 95, 094203 (2017)] with the high numerical accuracy necessary for crystalline graphene [Rowe et al., Phys. Rev. B 97, 054303 (2018)], thereby providing an interatomic potential that will be applicable to a wide range of applications concerning diverse forms of bulk and nanostructured carbon

Effect of Pressure on Superconducting Ca-intercalated Graphite CaC6_6

The pressure effect on the superconducting transition temperature ($T_c$) of the newly-discovered Ca-intercalated graphite compound CaC$_6$ has been investigated up to $\sim$ 16 kbar. $T_c$ is found to increase under pressure with a large relative ratio $\Delta$$T_c$/$T_c$ of $\approx$ +0.4 %/kbar. Using first-principles calculations, we show that the large and positive effect of pressure on $T_c$ can be explained in the scope of electron-phonon theory due to the presence of a soft phonon branch associated to in-plane vibrations of Ca atoms. Implications of the present findings on the current debate about the superconducting mechanism in graphite intercalation compounds are discussed.Comment: 6 pages, 5 figs, final PRB versio

Machine learning a general-purpose interatomic potential for silicon

The success of first-principles electronic-structure calculation for predictive modeling in chemistry, solid-state physics, and materials science is constrained by the limitations on simulated length scales and timescales due to the computational cost and its scaling. Techniques based on machine-learning ideas for interpolating the Born-Oppenheimer potential energy surface without explicitly describing electrons have recently shown great promise, but accurately and efficiently fitting the physically relevant space of configurations remains a challenging goal. Here, we present a Gaussian approximation potential for silicon that achieves this milestone, accurately reproducing density-functional-theory reference results for a wide range of observable properties, including crystal, liquid, and amorphous bulk phases, as well as point, line, and plane defects. We demonstrate that this new potential enables calculations such as finite-temperature phase-boundary lines, self-diffusivity in the liquid, formation of the amorphous by slow quench, and dynamic brittle fracture, all of which are very expensive with a first-principles method. We show that the uncertainty quantification inherent to the Gaussian process regression framework gives a qualitative estimate of the potential’s accuracy for a given atomic configuration. The success of this model shows that it is indeed possible to create a useful machine-learning-based interatomic potential that comprehensively describes a material on the atomic scale and serves as a template for the development of such models in the future