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Le Meloe variegatus Donovan sa ésence dans le Nord de l'Afrique sa biologie
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Vortex oscillations induced by a spin-polarized current in a magnetic nanopillar: Evidence for a failure of the Thiele approach
We investigate the vortex excitations induced by a spin-polarized current in
a magnetic nanopillar by means of micromagnetic simulations and analytical
calculations. Damped motion, stationary vortex rotation and the switching of
the vortex core are successively observed for increasing values of the current.
We demonstrate that even for small amplitude of the vortex motion, the
analytical description based the classical Thiele approach can yield
quantitatively and qualitatively unsound results. We suggest and validate a new
analytical technique based on the calculation of the energy dissipation
Single spin-torque vortex oscillator using combined bottom-up approach and e-beam lithography
A combined bottom-up assembly of electrodeposited nanowires and electron beam
lithography technique has been developed to investigate the spin transfer
torque and microwave emission on specially designed nanowires containing a
single Co/Cu/Co pseudo spin valve. Microwave signals have been obtained even at
zero magnetic field. Interestingly, high frequency vs. magnetic field
tunability was demonstrated, in the range 0.4 - 2 MHz/Oe, depending on the
orientation of the applied magnetic field relative to the magnetic layers of
the pseudo spin valve. The frequency values and the emitted signal frequency as
a function of the external magnetic field are in good quantitative agreement
with the analytical vortex model as well as with micromagnetic simulations.Comment: 9 pages, 4 figure
Switching the magnetic configuration of a spin valve by current induced domain wall motion
We present experimental results on the displacement of a domain wall by
injection of a dc current through the wall. The samples are 1 micron wide long
stripes of a CoO/Co/Cu/NiFe classical spin valve structure.
The stripes have been patterned by electron beam lithography. A neck has been
defined at 1/3 of the total length of the stripe and is a pinning center for
the domain walls, as shown by the steps of the giant magnetoresistance curves
at intermediate levels (1/3 or 2/3) between the resistances corresponding to
the parallel and antiparallel configurations. We show by electric transport
measurements that, once a wall is trapped, it can be moved by injecting a dc
current higher than a threshold current of the order of magnitude of 10^7
A/cm^2. We discuss the different possible origins of this effect, i.e. local
magnetic field created by the current and/or spin transfer from spin polarized
current.Comment: 3 pages, 3 figure
Switching a spin-valve back and forth by current-induced domain wall motion
We have studied the current-induced displacement of a domain wall (DW) in the
permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small
applied field. The displacement is in opposite direction for opposite dc
currents, and the current density required to move DW is only of the order of
10^6 A/cm^2. For H = 3 Oe, a back and forth DW motion between two stable
positions is observed. We also discuss the effect of an applied field on the DW
motion.Comment: 4 pages, 3 figure
Domain wall displacement by remote spin-current injection
We demonstrate numerically the ability to displace a magnetic domain wall by
a remote spin current injection. We consider a long and narrow magnetic
nanostripe with a single domain wall (DW). The spin-polarized current is
injected perpendicularly to the plane of the film (CPP) through a small
nanocontact which is located at certain distance from the domain wall initial
position. We show theoretically that the DW motion can be initiated not only by
conventional spin-transfer torque but also by indirect spin-torque, created by
a remote spin-current injection and then transferred to the DW by the
exchange-spring mechanism. An analytical description of this effect is
proposed. This finding may lead to a solution of bottleneck problems of DW
motion-based spintronic and neuromorphic devices with perpendicular
spin-current injection.Comment: 6 pages, 4 figure
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